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Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures
Title Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Paskaleva A. Atanassova E. Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV ORCID Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Semiconductor Science and Technology. Vol. 25, (2010), no. 075007 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations RAO, R. - LORENZI, P. - IRRERA, F. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. MAY 2014, vol. 32, no. 3. VIJAYAKUMAR, V. - VARADARAJAN, B. In MATERIALS RESEARCH EXPRESS. APR 2015, vol. 2, no. 4. LEI, Z.C. - ABIDIN, N.I.Z. - WONG, Y.H. Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient. In JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. AUG 2018, vol. 29, no. 15, p. 12888-12898. LEI, Zhen Ce - ODESANYA, Kazeem Olabisi - WONG, Yew Hoong. High-K gate oxide thin films based on germanium semiconductor substrate: A review. In Selected Topics in Germanium, 2022-09-02, pp. 47-92. SHARMA, U. - ASIF, M. - VARMA, V.M. - KUMAR, G. - MISHRA, S. - KUMAR, A. - THOMAS, R. Pulsed laser deposited Dy and Ta doped hafnium- zirconium oxide thin films for the ihigh-k/i applications. In PHYSICA SCRIPTA. ISSN 0031-8949, MAY 1 2023, vol. 98, no. 5. Dostupné na: https://doi.org/10.1088/1402-4896/accc5e. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2010 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1088/0268-1242/25/7/075007 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2010 2009 1.253 Q2 0.865 Q1
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