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Modeling of threshold voltage in pentacene organic field-effect transistors

  1. TitleModeling of threshold voltage in pentacene organic field-effect transistors
    Author Ou-Yang W.
    Co-authors Weis Martin Jr. SAVFYZIK - Fyzikálny ústav SAV

    Co-authors Taguchi D. Chen X. Manaka T. Iwamoto M.
    Source document Journal of Applied Physics. Vol. 107 (2010), 124506
    Languageeng - English
    CountryUS - United States of America
    Document kindrozpis článkov z periodík (rbx)
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2010
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1063/1.3449078
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201020092.072Q11.510Q1
Number of the records: 1  

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