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Early stage degradation of InAlN/GaN HEMTs during electrical stress

  1. TitleEarly stage degradation of InAlN/GaN HEMTs during electrical stress
    Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Čičo Karol SAVELEK - Elektrotechnický ústav SAV

    Fedor Ján 1976 SAVELEK - Elektrotechnický ústav SAV

    Carlin J.-F.

    Grandjean N.

    Killat N.

    Kuball M.

    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Source document / Haščík Štefan 1956 ; Osvald Jozef 1953 ASDAM 2012 : conference proceedings. P. 7-10. - Piscataway : IEEE, 2012 ; International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2012
    Languageeng - English
    Document kindrozpis článkov z periodík (rzb)
    CitationsROSSETTO, I. - RAMPAZZO, F. - SILVESTRI, R. - ZANANDREA, A. - DUA, C. - DELAGE, S. - OUALLI, M. - MENEGHINI, M. - ZANONI, E. - MENEGHESSO, G. In MICROELECTRONICS RELIABILITY. SEP-NOV 2013, vol. 53, no. 9-11, SI, p. 1476-1480.
    WU, Y.F. - DEL ALAMO, J.A. In IEEE TRANSACTIONS ON ELECTRON DEVICES. SEP 2016, vol. 63, no. 9, p. 3487-3492.
    CategoryAFC - Published papers from foreign scientific conferences
    Year2012
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2012
Number of the records: 1  

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