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GaAs nanowhiskers for femtosecond photodetectors and THz emitters
Title GaAs nanowhiskers for femtosecond photodetectors and THz emitters Author Mikulics M. Co-authors Zhang J. Sobolewski R. Adam Roman Juul L. Marso M. Winden A. Hartdegen H. Grützmacher D. Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Source document ASDAM 2012 : conference proceedings. P. 71-74. - Piscataway : IEEE, 2012 / Haščík Štefan 1956 ; Osvald Jozef 1953 ; International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2012 Language eng - English Document kind rozpis článkov z periodík (rzb) Citations EMELYANOV, E. A. - NASTOVJAK, A. G. - PETRUSHKOV, M. O. - ESIN, M. Yu. - GAVRILOVA, T. A. - PUTYATO, M. A. - SCHWARTZ, N. L. - SHVETS, V. A. - VASEV, A. V. - SEMYAGIN, B. R. - PREOBRAZHENSKII, V. V. A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates. In TECHNICAL PHYSICS LETTERS. ISSN 1063-7850, 2020, vol. 46, no. 2, pp. 161-164. Dostupné na: https://doi.org/10.1134/S1063785020020194. Category AFC - Published papers from foreign scientific conferences Year 2012 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012
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