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Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability
Title Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability Author Moereke J. Co-authors Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Uren M.J. Pei Y. Mishra Umesh K. Kuball M. Source document Physica status solidi A. Applications and materials science. Vol. 209, (2013), p. 2646-2652 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations HAHN, H. - REUTERS, B. - GEIPEL, S. - SCHAUERTE, M. - BENKHELIFA, F. - AMBACHER, O. - KALISCH, H. - VESCAN, A. In JOURNAL OF APPLIED PHYSICS. MAR 14 2015, vol. 117, no. 10. HAHN, H. - BENKHELIFA, F. - AMBACHER, O. - BRUNNER, F. - NOCULAK, A. - KALISCH, H. - VESCAN, A. In IEEE TRANSACTIONS ON ELECTRON DEVICES. FEB 2015, vol. 62, no. 2, p. 538-545. BORDOLOI, Sushanta - RAY, Ashok - TRIVEDI, Gaurav. Simulation framework for GaN devices with special mention to reliability concern. In VLSI and Post-CMOS Electronics, 2019-01-01, pp. 63-83. Dostupné na: https://doi.org/10.1049/PBCS073G_ch4. BORDOLOI, S. - RAY, A. - TRIVEDI, G. Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification. In IEEE ACCESS. ISSN 2169-3536, 2021, vol. 9, p. 99828-99841. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2013 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1002/pssa.201228395 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2013 2012 1.469 Q2 0.866 Q1
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