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Analysis of current transport in gate oxide based (MOS) Schottky diodes on GaN/AlGaN/GaN

  1. TitleAnalysis of current transport in gate oxide based (MOS) Schottky diodes on GaN/AlGaN/GaN
    Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV

    Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Source document ADEPT 2017 : proceedings of the 5th International Conference on Advances in Electronic and Photonic Technologies, Podbanské, High Tatras, Slovakia, June 19-22, 2017. P. 52-55. - Žilina : University of Žilina, 2017 / Lettrichová I. ; Šušlik Ľ. ; Kováč Jaroslav Jr.
    Languageeng - English
    Document kindrozpis článkov z periodík (rzb)
    CategoryAFD - Published papers from domestic scientific conferences
    Year2017
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2017
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