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Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties

  1. TitleSchottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties
    Author Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV

    Šagátová A.

    Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV

    Zápražný Zdenko 1980 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Sedlačková K.

    Sekáčová Mária 1955 SAVELEK - Elektrotechnický ústav SAV

    Dubecký František 1946 SAVELEK - Elektrotechnický ústav SAV

    Skuratov V.A.

    Korytár Dušan 1950 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Nečas V.

    Source document Applied Surface Science. Vol. 461 (2018), p. 276-280
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsZHOU, Yuying - LI, Shimin - WANG, Ying - HUANG, Qing - ZHANG, Wei - YAO, Yao - HAO, Jiaming - SUN, Yan - TANG, Ming - LI, Bin - ZHANG, Yi - HU, Jun - YAN, Long. One-step ion beam irradiation manufacture of 3D micro/nanopatterned structures in SiC with tunable work functions. In CARBON. ISSN 0008-6223, 2019, vol. 148, no., pp. 387-393.
    DONG, Peng - QIN, Yazhou - YU, Xuegong - XU, Xingliang - CHEN, Zhe - LI, Lianghui - CUI, Yingxin. Electron Radiation Effects on the 4H-SiC PiN Diodes Characteristics: An Insight From Point Defects to Electrical Degradation. In IEEE ACCESS. ISSN 2169-3536, 2019, vol. 7, no., pp. 170385-170391.
    XIE, X.M. - SU, Z.A. - HUANG, D. - YANG, C. - WANG, Y.F. - JIANG, D.Y. - HUANG, Q.Z. Synthesis and growth mechanism of SiC/SiO2 nanochains by catalyst-free thermal evaporation method in Ar/CO atmosphere. In TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA. ISSN 1003-6326, NOV 2020, vol. 30, no. 11, p. 3058-3066.
    SARAC, Y. - SENER, S.S. - BALTAKESMEZ, A. - GUZELDIR, B. - SAGLAM, M. A comparative study on theoretical and experimental methods using basic electrical parameters of Au/CNTs/lnP/Au-Ge diodes. In JOURNAL OF ALLOYS AND COMPOUNDS. ISSN 0925-8388, MAY 25 2020, vol. 824.
    JIANG, L. - ZOU, W.T. - ZHANG, Q.P. - CHEN, Y.P. - YAN, X.H. - WANG, Y. - WANG, S.Y. Large-area vertical Schottky barrier diodes based on 4H-SiC epilayers: Temperature-dependent electrical characteristics. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT. ISSN 0168-9002, MAR 2023, vol. 1048. Dostupné na: https://doi.org/10.1016/j.nima.2022.167917.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2018
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1016/j.apsusc.2018.07.008
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201820174.439Q11.093Q1
Number of the records: 1  

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