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Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2
Title Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2 Author Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Pozzovivo G. Abermann S. Carlin J.-F. Gonschorek M. Feltin E. Grandjean N. Bertagnolli E. Strasser G. Pogany D. Source document . Vol. 55, (2008), p. 937-941 IEEE Transactions on Electron Devices Language eng - English Country US - United States of America Document kind rozpis článkov z periodík (rbx) Citations Iliopoulos E., Adikimenakis, A., Giessen, C., Heuken, M., Georgakilas, A.: International Workshop on Nitride Semiconductors. Book of Abstracts. Montreux 2008. P. 394. DABIRAN, A.M. - WOWCHAK, A.M. - OSINSKY, A. - XIE, J. - HERTOG, B. - CUI, B. - LOOK, D.C. - CHOW, P.P. In APPLIED PHYSICS LETTERS. AUG 25 2008, vol. 93, no. 8. WU, T.Y. - LIN, S.K. - SZE, P.W. - HUANG, J.J. - CHIEN, W.C. - HU, C.C. - TSAI, M.J. - WANG, Y.H. In IEEE TRANSACTIONS ON ELECTRON DEVICES. 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JUN 2023, vol. 14, no. 6. Dostupné na: https://doi.org/10.3390/mi14061101. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2008 
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