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Microwave characterization and properties of 2 µm gate length AlGaN/Gan HEMT structures

  1. TitleMicrowave characterization and properties of 2 µm gate length AlGaN/Gan HEMT structures
    Author Tomáška M.
    Co-authors Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV

    Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Mišun M.

    Source document . P. 317-320 COMITE 2008 : Proceedings of the 14th Conference on Microwave Techniques. - Praha : Československá sekce IEEE, 2008
    Languageeng - English
    CountryCZ - Czech Republic
    Document kindrozpis článkov z periodík (rzb)
    CategoryAEE - Scientific papers in foreign non peer-reviewed proceedings, monographs
    Category of document (from 2022)O2 - Odborný výstup publikačnej činnosti ako časť knižnej publikácie alebo zborníka
    Type of documentpríspevok
    Year2008
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2008
Number of the records: 1  

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