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Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering
Title Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering Author Ostermaier C. Co-authors Pozzovivo G. Carlin J.-F. Basnar B. Schrenk W. Ahn S.-I. Detz H. Klang P. Andrews A.M. Douvry Y. Gaquiere C. De Jaeger J.-C. Toth L. Pécz B. Gonschorek M. Feltin E. Grandjean N. Strasser G. Pogany D. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document AIP Conference Proceedings. Vol. 1399, (2011), p. 905-906 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations DU, J. - PAN, P. - YAN, H. - YU, Q. In NANOSCIENCE AND NANOTECHNOLOGY LETTERS. SEP 2014, vol. 6, no. 9, p. 830-834. Category ADEB - Scientific papers in other foreign journals not registered in Current Contents Connect without IF (non-impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2012 Registered in WOS Registered in SCOPUS DOI 10.1063/1.3666669 
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