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Comparative study of InAlN/GaN HFETs with and without thermal oxidized InAlN of different composition

  1. TitleComparative study of InAlN/GaN HFETs with and without thermal oxidized InAlN of different composition
    Author Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Čičo Karol SAVELEK - Elektrotechnický ústav SAV

    Mikulics M.

    Source document / Vajda J. ; Jamnický I. APCOM 2012 : proceedings on Applied Physics of Condensed Matter of the 18th International Conference. P. 165-168. - Bratislava : Slovenská technická univerzita v Bratislave, 2012 ; International Conference on Applied Physics of Condensed Matter APCOM 2012
    Languageeng - English
    Document kindrozpis článkov z periodík (rzb)
    CategoryAFD - Published papers from domestic scientific conferences
    Year2012
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2012
Number of the records: 1  

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