Number of the records: 1
Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator
Title Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator Author Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV Marek J. Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Source document Semiconductor Science and Technology. Vol. 29, (2014), 045003 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations YATABE, Z. - HORI, Y. - MA, W.C. - ASUBAR, J.T. - AKAZAWA, M. - SATO, T. - HASHIZUME, T. In JAPANESE JOURNAL OF APPLIED PHYSICS. OCT 2014, vol. 53, no. 10. STUCHLIKOVA, L. - KOSA, A. - JAKUS, J. - SUSOLIAK, M. - DONOVAL, D. - HRBACEK, J. In 10TH EUROPEAN WORKSHOP ON MICROELECTRONICS EDUCATION (EWME). 2014, p. 116-119. YATABE, Z. - ASUBAR, J.T. - HASHIZUME, T. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. OCT 5 2016, vol. 49, no. 39. MEKNI, O. - GOEURIOT, D. - DAMAMME, G. - RAOUADI, K. - SAO, S.J. - MEUNIER, C. - ASKRI, B. - AOUFI, A. In CERAMICS INTERNATIONAL. MAY 15 2016, vol. 42, no. 7, p. 8729-8737. MEKNI, O. - GOEURIOT, D. - SAO, S.J. - MEUNIER, C. - ASKRI, B. - RAOUADI, K. - DAMAMME, G. In DIELECTRIC MATERIALS AND APPLICATIONS, ISYDMA '2016. 2016, vol. 1, p. 167-170. MEKNI, O. - GOEURIOT, D. - SAO, S.J. - MEUNIER, C. - DAMAMME, G. - MEKNI, O. - RAOUADI, K. In 2016 IEEE INTERNATIONAL CONFERENCE ON DIELECTRICS (ICD), VOLS 1-2. 2016, p. 139-142. JIANG, Huaxing - LIU, Chao - CHEN, Yuying - TANG, Chak Wah - LAU, Kei May. Low leakage high breakdown GaN MOSHEMTs on Si with a ZrOinf2/infgate dielectric. In CS MANTECH 2017 2017 International Conference on Compound Semiconductor Manufacturing Technology, 2017-01-01, pp. HASHIZUME, T. - NISHIGUCHI, K. - KANEKI, S. - KUZMIK, J. - YATABE, Z. State of the art on gate insulation and surface passivation for GaN-based power HEMTs. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. MAY 2018, vol. 78, p. 85-95. TOUATI, Z. - HAMAIZIA, Z. - MESSAI, Z. Study of AlGaN/GaN MOS-HEMTs with TiO2 gate dielectric and regrown source/drain. In JOURNAL OF NEW TECHNOLOGY AND MATERIALS. DEC 2018, vol. 8, no. 2, p. 16-23. DUTTA GUPTA, Sayak - JOSHI, Vipin - ROY CHAUDHURI, Rajarshi - SHRIVASTAVA, Mayank. Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors. In JOURNAL OF APPLIED PHYSICS, 2021, vol. 130, no. 1, pp. ISSN 0021-8979. Dostupné na: https://doi.org/10.1063/5.0053982. ZHANG, Y. - XU, L.H. - GU, Y.T. - GUO, H.W. - JIANG, H.X. - LAU, K.M. - ZOU, X.B. Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer. In IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. ISSN 2168-6734, 2022, vol. 10, p. 540-546. Dostupné na: https://doi.org/10.1109/JEDS.2022.3189819. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2014 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1088/0268-1242/29/4/045003 
article
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2014 2013 2.206 Q1 1.173 Q1
Number of the records: 1