Dislocation generation related to micro-craks in Si wafers: High temperature in situ study with white beam X-ray topography

Number of the records: 1

Title	Dislocation generation related to micro-craks in Si wafers: High temperature in situ study with white beam X-ray topography
Author	Danilewsky A.
Co-authors	Wittge J.
	Hess A.
	Cröll A.
	Allen David
	McNally P.
	Vagovič Patrik SAVELEK - Elektrotechnický ústav SAV
	Cecilia A.
	Li Z.J.
	Gorostegui-Colinas E.
	Elizelde M.R.

Source document	. Vol. 268, (2010), p. 399-402 Nuclear Instruments and Methods in Physical Research B
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	REIMANN, C. - FRIEDRICH, J. - MEISSNER, E. - ORIWOL, D. - SYLLA, L. In ACTA MATERIALIA. JUL 2015, vol. 93, p. 129-137.
	GUO, J. - AILIHUMAER, T. - PENG, H. - RAGHOTHAMACHAR, B. - DUDLEY, M. In-Situ Synchrotron X-Ray Topography Study on the Stress Relaxation Process in 4H-SiC Homoepitaxial Layers. In GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8. ISSN 1938-5862, 2018, vol. 86, no. 12, pp. 75-82.
	ZHAN XIA - KELLEHER, Joe - GAO JIAN-BO - MA YAN-LING - CHU MING-QIANG - ZHANG SHU-YAN - ZHANG PENG - PADDEA, Sanjooram - GONG ZHI-FENG - HOU XIAO-DONG. High temperature sample environment upgrade of ISIS engineering materials in-situ diffraction experiment. In ACTA PHYSICA SINICA. ISSN 1000-3290, 2019, vol. 68, no. 13, pp.132901
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2010
Registered in	WOS
Registered in	CCC

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2010	2009	1.156	Q1	0.680	Q2

Number of the records: 1