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Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond
Title Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond Author Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Bychikhin S. Pogany D. Pichonat E. Lancry O. Gaquiere C. Tsiakatouras G. Deligeorgis G. Georgakilas A. Source document Journal of Applied Physics. Vol. 109, (2011), no. 086106 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations HIRAMA, K. - KASU, M. - TANIYASU, Y. In IEEE ELECTRON DEVICE LETTERS. APR 2012, vol. 33, no. 4, p. 513-515. CHO, J.W. - LI, Z.J. - BOZORG-GRAYELI, E. - KODAMA, T. - FRANCIS, D. - EJECKAM, F. - FAILI, F. - ASHEGHI, M. - GOODSON, K.E. In 2012 13TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM). 2012, p. 435-439. CHO, J.W. - LI, Z.J. - BOZORG-GRAYELI, E. - KODAMA, T. - FRANCIS, D. - EJECKAM, F. - FAILI, F. - ASHEGHI, M. - GOODSON, K.E. In IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY. JAN 2013, vol. 3, no. 1, p. 79-85. Won, Y. Cho, J., Agonafer, D., Asheghi, M., Goodson, K.E.: Technical Digest - IEEE CSIC 2013, Art. no. 6659222 2013 CAHILL, D. G. - BRAUN, P. V. - CHEN, G. - CLARKE, D. R. - FAN, S.- GOODSON, K. E. - KEBLINSKI, P.- KING, W. P. - MAHAN, G. D. - MAJUMDAR, A. - MARIS, H. J. - PHILLPOT, S. R. - POP, E. - SHI, L. In APPLIED PHYSICS REVIEWS. MAR 2014, vol. 1, no. 1. WON, Y. - CHO, J. - AGONAFER, D. - ASHEGHI, M. - GOODSON, K.E. In IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY. JUN 2015, vol. 5, no. 6, p. 737-744. SUN, H.R. - SIMON, R.B. - POMEROY, J.W. - FRANCIS, D. - FAILI, F. - TWITCHEN, D.J. - KUBALL, M. In APPLIED PHYSICS LETTERS. MAR 16 2015, vol. 106, no. 11. Chen, T., Kong, Y., Wu, L. Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics 36 (2016), pp. 360-364 KUBALL, M. - POMEROY, J.W. In IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. DEC 2016, vol. 16, no. 4, p. 667-684. WANG, W.L. - YAN, T. - YANG, W.J. - ZHU, Y.N. - WANG, H.Y. - LI, G.Q. - YE, N. In CRYSTENGCOMM. 2016, vol. 18, no. 25, p. 4688-4694. ZHOU, Y. - RAMANETI, R. - ANAYA, J. - KORNEYCHUK, S. - DERLUYN, J. - SUN, H. - POMEROY, J. - VERBEECK, J. - HAENEN, K. - KUBALL, M. In APPLIED PHYSICS LETTERS. JUL 24 2017, vol. 111, no. 4. TAWFIK, W.Z. - HYUN, G.Y. - LEE, S.J. - RYU, S.W. - HA, J.S. - LEE, J.K. Enhanced performance of GaN-based LEDs via electroplating of a patterned copper layer on the backside. In JOURNAL OF MATERIALS SCIENCE. JUN 2018, vol. 53, no. 12, p. 8878-8886. MINOURA, Y. - OHKI, T. - OKAMOTO, N. - YAMADA, A. - MAKIYAMA, K. - KOTANI, J. - OZAKI, S. - SATO, M. - NAKAMURA, N. Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, APR 1 2020, vol. 59, SG. YUAN, C. - HANUS, R. - GRAHAM, S. A review of thermoreflectance techniques for characterizing wide bandgap semiconductors' thermal properties and devices' temperatures. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, DEC 14 2022, vol. 132, no. 22. Dostupné na: https://doi.org/10.1063/5.0122200. MINOURA, Y. - OHKI, T. - OKAMOTO, N. - SATO, M. - OZAKI, S. - YAMADA, A. - KOTANI, J. GaN MMICs on a diamond heat spreader with through-substrate vias fabricated by deep dry etching process. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, MAR 1 2022, vol. 15, no. 3. Dostupné na: https://doi.org/10.35848/1882-0786/ac5222. FENG, T.L. - ZHOU, H. - CHENG, Z. - LARKIN, L.S. - NEUPANE, M.R. A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces. In ACS APPLIED MATERIALS & INTERFACES. ISSN 1944-8244, JUN 16 2023, vol. 15, no. 25, p. 29655-29673. Dostupné na: https://doi.org/10.1021/acsami.3c02507. PRAJAPAT, P. - SINGH, D.K. - GUPTA, G. Growth of III-nitrides by molecular beam epitaxy: Unconventional substrates for conventional semiconductors. In MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. ISSN 0921-5107, SEP 2023, vol. 295. Dostupné na: https://doi.org/10.1016/j.mseb.2023.116574. KOBAYASHI, A. - TOMIYAMA, H. - OHNO, Y. - SHIMIZU, Y. - NAGAI, Y. - SHIGEKAWA, N. - LIANG, J.B. Room-temperature bonding of GaN and diamond via a SiC layer. In FUNCTIONAL DIAMOND. ISSN 2694-1112, DEC 31 2022, vol. 2, no. 1, p. 142-150. Dostupné na: https://doi.org/10.1080/26941112.2022.2145508. TANG, D.S. - CAO, B.Y. Phonon thermal transport and its tunability in GaN for near-junction thermal management of electronics: A review. In INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER. ISSN 0017-9310, JAN 2023, vol. 200. Dostupné na: https://doi.org/10.1016/j.ijheatmasstransfer.2022.123497. SANG, L. Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices. In FUNCTIONAL DIAMOND. ISSN 2694-1112, JAN 14 2022, vol. 1, no. 1, p. 174-188. Dostupné na: https://doi.org/10.1080/26941112.2021.1980356. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2011 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1063/1.3581032 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2011 2010 2.079 Q2 1.484 Q1
Number of the records: 1