Number of the records: 1  

Non-uniform distribution of induced strain in gate recessed AlGaN/GaN structure evaluated by micro PL measurements

  1. TitleNon-uniform distribution of induced strain in gate recessed AlGaN/GaN structure evaluated by micro PL measurements
    Author Mikulics M.
    Co-authors Hartdegen H.

    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Sofer Z.

    Šimek P.

    Trellenkamp St.

    Grützmacher D.

    Luth H.

    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV

    Marso M.

    Source document Semiconductor Science and Technology. Vol. 27 (2012), no. 105008
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsAFZAL, N. - DEVARAJAN, M. - IBRAHIM, K. In MATERIALS RESEARCH EXPRESS. AUG 2016, vol. 3, no. 8.
    BAI, D. - WU, T. - LI, X. - GAO, X.M. - XU, Y. - CAO, Z.P. - ZHU, H.B. - WANG, Y.J. In APPLIED PHYSICS B-LASERS AND OPTICS. JAN 2016, vol. 122, no. 1.
    YUAN, J.L. - GAO, X.M. - YANG, Y.C. - ZHU, G.X. - YUAN, W. - CHOI, H.W. - ZHANG, Z.Y. - WANG, Y.J. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. APR 2017, vol. 32, no. 4.
    LIU, Q.F. - WANG, H.H. - HE, S.M. - SA, T.L. - CHENG, X.F. - XU, R.Q. Design of micro-nano grooves incorporated into suspended GaN membrane for active integrated optics. In AIP ADVANCES. NOV 2018, vol. 8, no. 11.
    YAMADA, A. - YAITA, J. - NAKAMURA, N. - KOTANI, J. Low-sheet-resistance high-electron-mobility transistor structures with strain-controlled high-Al-composition AlGaN barrier grown by MOVPE. In JOURNAL OF CRYSTAL GROWTH. ISSN 0022-0248, APR 15 2021, vol. 560.
    YAMADA, A. - YAITA, J. - KOTANI, J. Enhancement of two-dimensional electron gas mobility using strain reduced AlGaN barriers grown by metalorganic vapor phase epitaxy under nitrogen atmosphere. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JUL 1 2022, vol. 61, no. 7. Dostupné na: https://doi.org/10.35848/1347-4065/ac7624.
    Liu, Y., Chen, S., Cheng, Z., Wang, T., Huang, C., Jiang, G., Zhang, H., Cai, Y.: Temperature dependence of the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN HFETs In Micro and NanostructuresVolume 164 (2022) 107160
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2012
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1088/0268-1242/27/10/105008
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201220111.723Q11.008Q1
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.