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Characterization of epitaxial 4H-SiC for photon detectors
Title Characterization of epitaxial 4H-SiC for photon detectors Author Dubecký František 1946 SAVELEK - Elektrotechnický ústav SAV Co-authors Gombia E. Ferrari C. Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV ORCID Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Baldini M. Kováč Jaroslav Baček D. Kováč P. Hrkút Pavol 1948- SAVINFO - Ústav informatiky SAV SCOPUS RID Nečas V. Source document Journal of Instrumentation. Vol. 7 (2012), P09005 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations LIU, Lin-Yue - WANG, Ling - JIN, Peng - LIU, Jin-Liang - ZHANG, Xian-Peng - CHEN, Liang - ZHANG, Jiang-Fu - OUYANG, Xiao-Ping - LIU, Ao - HUANG, Run-Hua - BAI, Song. The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm(2). In SENSORS. ISSN 1424-8220, 2017, vol. 17, no. 10, pp. OU, Haiyan - SHI, Xiaodong - LU, Yaoqin - KOLLMUSS, Manuel - STEINER, Johannes - TABOURET, Vincent - SYVAJARVI, Mikael - WELLMANN, Peter - CHAUSSENDE, Didier. Novel Photonic Applications of Silicon Carbide. In MATERIALS, 2023, vol. 16, no. 3, pp. Dostupné na: https://doi.org/10.3390/ma16031014. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2012 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1088/1748-0221/7/09/P09005 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012 2011 1.869 Q1 1.126 Q1
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