GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD

Number of the records: 1

Title	GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD
Author	Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
Co-authors	Fox A.
	Kúdela Róbert 1952 SAVELEK - Elektrotechnický ústav SAV
	Mikulics M.
	Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ^ORCID

Source document	Semiconductor Science and Technology. Vol. 27, (2012), 115002
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2012
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1088/0268-1242/27/11/115002

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2012	2011	1.723	Q1	1.008	Q1

Number of the records: 1