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Early stage degradation of InAlN/GaN HEMTs during electrical stress
Title Early stage degradation of InAlN/GaN HEMTs during electrical stress Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Čičo Karol SAVELEK - Elektrotechnický ústav SAV Fedor Ján 1976 SAVELEK - Elektrotechnický ústav SAV Carlin J.-F. Grandjean N. Killat N. Kuball M. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document / Haščík Štefan 1956 ; Osvald Jozef 1953 ASDAM 2012 : conference proceedings. P. 7-10. - Piscataway : IEEE, 2012 ; International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2012 Language eng - English Document kind rozpis článkov z periodík (rzb) Citations ROSSETTO, I. - RAMPAZZO, F. - SILVESTRI, R. - ZANANDREA, A. - DUA, C. - DELAGE, S. - OUALLI, M. - MENEGHINI, M. - ZANONI, E. - MENEGHESSO, G. In MICROELECTRONICS RELIABILITY. SEP-NOV 2013, vol. 53, no. 9-11, SI, p. 1476-1480. WU, Y.F. - DEL ALAMO, J.A. In IEEE TRANSACTIONS ON ELECTRON DEVICES. SEP 2016, vol. 63, no. 9, p. 3487-3492. Category AFC - Published papers from foreign scientific conferences Year 2012 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012
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