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Enhanced sensitivity of Pt/NiO gate based AlGaN/GaN C-HEMT hydrogen sensor
Title Enhanced sensitivity of Pt/NiO gate based AlGaN/GaN C-HEMT hydrogen sensor Author Rýger Ivan 1987 SAVELEK - Elektrotechnický ústav SAV Co-authors Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Dzuba Jaroslav 1987 SAVELEK - Elektrotechnický ústav SAV Vallo Martin SAVELEK - Elektrotechnický ústav SAV Kunzo Pavol 1985 SAVELEK - Elektrotechnický ústav SAV Vávra Ivo 1949 SAVELEK - Elektrotechnický ústav SAV Source document Key Engineering Materials. Vol. 605, (2014), p. 491-494 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations AJAYAN, J. - NIRMAL, D. - RAMESH, R. - BHATTACHARYA, Sandip - TAYAL, Shubham - JOSEPH, L. M. I. Leo - THOUTAM, Laxman Raju - AJITHA, D. A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H-2) sensors for aerospace and industrial applications. In MEASUREMENT, 2021, vol. 186, no., pp. ISSN 0263-2241. Dostupné na: https://doi.org/10.1016/j.measurement.2021.110100. Category ADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2014 Registered in WOS Registered in SCOPUS DOI 10.4028/www.scientific.net/KEM.605.491 article
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore N rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2014 2013 0.190 Q3
Number of the records: 1