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Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density
Title Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Válik Lukáš 1990 SAVELEK - Elektrotechnický ústav SAV Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV ORCID Hashizume T. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document ASDAM 2016 : the 11th International Conference on Advanced Semiconductor Devices and Microsystems. P. 1-4. - : IEEE, 2016 / Haščík Štefan 1956 ; Dzuba Jaroslav 1987 ; Vanko Gabriel 1981 Language eng - English Document kind rozpis článkov z periodík (rzb) Citations DING, L. - XU, C.L. Weakly-Supervised Action Segmentation with Iterative Soft Boundary Assignment. In 2018 IEEE/CVF CONFERENCE ON COMPUTER VISION AND PATTERN RECOGNITION (CVPR). 2018, p. 6508-6516. KIM, H. - CHAVAN, V.D. - AZIZ, J. - KO, B. - LEE, J.S. - RHO, J. - DONGALE, T.D. - CHOI, K.K. - KIM, D.K. Effect of ALD Processes on Physical and Electrical Properties of HfO2 Dielectrics for the Surface Passivation of a CMOS Image Sensor Application. In IEEE ACCESS. ISSN 2169-3536, 2022, vol. 10, p. 68724-68730. Dostupné na: https://doi.org/10.1109/ACCESS.2022.3183593. Category ADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2016 Registered in WOS Registered in SCOPUS DOI 10.1109/ASDAM.2016.7805881 
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