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Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires

  1. TitleFormation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires
    Author Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Novotný I.

    Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Dérer Ján 1948 SAVELEK - Elektrotechnický ústav SAV

    Kováč Jaroslav

    Kováč Jaroslav Jr.

    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV

    Source document Applied Surface Science. Vol. 395 (2017), p. 162-165
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2017
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1016/j.apsusc.2016.07.152
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201720163.387Q10.958Q1
Number of the records: 1  

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