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Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions

  1. TitleHafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions
    Author Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Kundrata Ivan SAVELEK - Elektrotechnický ústav SAV

    Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV

    Precner Marián 1987 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Klimo Martin

    Šuch Ondrej 1972

    Škvarek Ondrej

    Source document Journal of Applied Physics. Vol. 124 (2018), no. 152109
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsAGUIRRE, F.L. - PAZOS, S.M. - PALUMBO, F. - SUNE, J. - MIRANDA, E. Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition. In IEEE ACCESS. ISSN 2169-3536, 2020, vol. 8, p. 202174-202193.
    AGUIRRE, F.L. - PAZOS, S.M. - PALUMBO, F. - SUNE, J. - MIRANDA, E. SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model. In FRONTIERS IN PHYSICS. ISSN 2296-424X, SEP 23 2021, vol. 9.
    AGUIRRE, F.L. - GOMEZ, N.M. - PAZOS, S.M. - PALUMBO, F. - SUNE, J. - MIRANDA, E. Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition. In JOURNAL OF LOW POWER ELECTRONICS AND APPLICATIONS. MAR 2021, vol. 11, no. 1.
    AGUIRRE, F.L. - PIROS, E. - KAISER, N. - VOGEL, T. - PETZOLD, S. - GEHRUNGER, J. - OSTER, T. - HOCHBERGER, C. - SUNE, J. - ALFF, L. - MIRANDA, E. Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks. In MICROMACHINES. NOV 2022, vol. 13, no. 11. Dostupné na: https://doi.org/10.3390/mi13112002.
    LI, C.Y. - HSU, T.H. - HUANG, C.L. Reliable RRAM devices utilizing sol-gel derived amorphous Ce2Ti2O7 thin films. In JOURNAL OF ALLOYS AND COMPOUNDS. ISSN 0925-8388, OCT 25 2023, vol. 961. Dostupné na: https://doi.org/10.1016/j.jallcom.2023.170987.
    GE, P.Z. - TANG, H. - HUANG, X.X. - TANG, X.G. - JIANG, Y.P. - LIU, Q.X. Investigation of resistive switching properties in acceptor-induced Sr(Fe,Ti) Osub3/sub thin film memristor. In MATERIALS TODAY COMMUNICATIONS. JUN 2023, vol. 35. Dostupné na: https://doi.org/10.1016/j.mtcomm.2023.105593.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2018
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1063/1.5025802
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201820172.176Q20.739Q2
Number of the records: 1  

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