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SPICE model for the current-voltage characteristic of resistive switching devices including the snapback effect
Title SPICE model for the current-voltage characteristic of resistive switching devices including the snapback effect Author Miranda E. Co-authors Muñoz-Gorriz J. Suñe J. Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Microelectronic Engineering. Vol. 215 (2019), no. 110998 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations GONZALEZ, M.B. - MAESTRO-IZQUIERDO, M. - JIMENEZ-MOLINOS, F. - ROLDAN, J.B. - CAMPABADAL, F. Current transient response and role of the internal resistance in HfOx-based memristors. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, DEC 28 2020, vol. 117, no. 26. GONZALEZ, M.B. - MAESTRO-IZQUIERDO, M. - CAMPABADAL, F. - ALDANA, S. - JIMENEZ-MOLINOS, F. - ROLDAN, J.B. Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors. In 2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). ISSN 1541-7026, 2020. GONZÁLEZ, M. B. - MAESTRO-IZQUIERDO, M. - POBLADOR, S. - ZABALA, M. - CAMPABADAL, F. - GONZÁLEZ-CORDERO, G. - ALDANA, S. - MALDONADO, D. - JIMÉNEZ-MOLINOS, F. - ROLDÁN, J. B. Synaptic devices based on HfOinf2/inf memristors. In Mem-elements for Neuromorphic Circuits with Artificial Intelligence Applications, 2021-01-01, pp. 383-426. Dostupné na: https://doi.org/10.1016/B978-0-12-821184-7.00028-1. OSTROVSKII, V. - FEDOSEEV, P. - BOBROVA, Y. - BUTUSOV, D. Structural and Parametric Identification of Knowm Memristors. In NANOMATERIALS. JAN 2022, vol. 12, no. 1. Dostupné na: https://doi.org/10.3390/nano12010063. LIU, Y.W. - ZHU, K.C. - HUI, F. - YUAN, B. - ZHANG, C.H. - MA, Y.C. - ZHANG, X.X. - LANZA, M. Inkjet Printing: A Cheap and Easy-to-Use Alternative to Wire Bonding for Academics. In CRYSTAL RESEARCH AND TECHNOLOGY. ISSN 0232-1300, MAR 2022, vol. 57, no. 3. Dostupné na: https://doi.org/10.1002/crat.202100210. ATHENA, F.F. - VOGEL, E.M. Describing the analog resistance change of HfOsubx/sub-based neuromorphic synapses using a compact series trap-assisted tunneling and Ohmic conduction model. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, OCT 16 2023, vol. 123, no. 16. Dostupné na: https://doi.org/10.1063/5.0163566. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2019 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1016/j.mee.2019.110998 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2019 2018 1.654 Q3 0.561 Q2
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