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Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: role of deep levels
Title Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: role of deep levels Author Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Chvála A. Šichman Peter SAVELEK - Elektrotechnický ústav SAV Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ORCID Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Priesol J. Šatka A. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document IEEE Transactions on Electron Devices. Vol. 68 (2021), no. 2365 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations KIM, H. Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review. In JOURNAL OF ELECTRONIC MATERIALS. ISSN 0361-5235, DEC 2021, vol. 50, no. 12, SI, p. 6688-6707. QIN, Y. - ALBANO, B. - SPENCER, J. - LUNDH, J.S. - WANG, B.Y. - BUTTAY, C. - TADJER, M. - DIMARINO, C. - ZHANG, Y.H. Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, MAR 2 2023, vol. 56, no. 9. Dostupné na: https://doi.org/10.1088/1361-6463/acb4ff. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2021 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1109/TED.2021.3065893 
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File name Access Size Downloaded Type License Analysis and Modeling of Vertical Current.pdf Neprístupný/archív 1.3 MB 1 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2021 2020 2.917 Q2 0.828 Q1
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