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Calculation of field-induced phonon-assisted tunnel ionization of deep centers in GaAs using the quantum defect method

  1. TitleCalculation of field-induced phonon-assisted tunnel ionization of deep centers in GaAs using the quantum defect method
    Author Olejníková Božena SAVELEK - Elektrotechnický ústav SAV
    Source document Czechoslovak journal of physics. Vol. 35 (1985), p. 585-588
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsPASTRNAK, J. - KAREL, F. - PETRICEK, O. THERMOSTIMULATED PHOTOCONDUCTIVITY METHOD - APPLICATION TO GAAS. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, MAR 1991, vol. 124, no. 1, p. 279-293.
    CategoryADDA - Scientific papers in domestic journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year1985
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    1985
Number of the records: 1  

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