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Optimalization of SiCl4 – based reactive ion etching and nickel hard mask for GaN on GaN vertical structures
Title Optimalization of SiCl4 – based reactive ion etching and nickel hard mask for GaN on GaN vertical structures Author Šichman Peter SAVELEK - Elektrotechnický ústav SAV Co-authors Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ORCID Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Proceedings of ADEPT 2021 : 9th International Conference on Advances in Electronic and Photonic Technologies, Podbanské, High Tatras, Slovakia. P. 163-166. - Žilina : Univ. Zilina in EDIS-Publishing Centre of UZ, 2021 / Jandura D. ; Maniaková P. ; Lettrichová I. ; Kováč Jaroslav Jr. Language eng - English Document kind rozpis článkov z periodík (rzb) Category AFD - Published papers from domestic scientific conferences Year 2021 
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