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Amorphous silicon carbide thin films doped with P or B for the photoelectrochemical water splitting devices

  1. TitleAmorphous silicon carbide thin films doped with P or B for the photoelectrochemical water splitting devices
    Author Huran Jozef 1955 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV

    Sasinková Vlasta 1954- SAVCHEM - Chemický ústav SAV

    Kleinová Angela 1960- SAVPOLYM - Ústav polymérov SAV    ORCID

    Co-authors Mikolášek Miroslav Kobzev Aexander P.
    Source document Current Applied Physics. Vol. 34 (2022), pp. 101-106
    Languageeng - English
    CountryNL - Netherlands
    Document kindrozpis článkov z periodík (rbx)
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2022
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1016/j.cap.2021.11.014
    article

    article

    File nameAccessSizeDownloadedTypeLicense
    Amorphous silicon carbide thin films doped with P or B for the.pdfNeprístupný/archív1.2 MB3Publisher's version
    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    202220212.856Q20.521Q2
Number of the records: 1  

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