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Title Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study Author Harmatha L. Co-authors Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV Slugeň V. Ballo P. Písečný Pavol SAVINFO - Ústav informatiky SAV Šik J. Kögel G. Source document Microelectronics Journal. Vol. 37 (2006), p. 283 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2006 DOI 10.1016/j.mejo.2005.04.059 
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