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Title Gate reliability investigation in normally-off p-type-gan cap/AlGaN/GaN HEMTs under forward bias stress Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV Co-authors Hilt O. Bahat-Treidel E. Würfl H.-J. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV Source document IEEE Electron Device Letters. Vol. 37 (2016), p. 385 - 388 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2016 DOI 10.1109/LED.2016.2535133 File name Access Size Downloaded Type License Gate Reliability Investigation in Normally-Off p.pdf Neprístupný/archív 751.9 KB 0 Publisher's version 
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Title Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV Co-authors Hilt O. Bahat-Treidel E. Würfl H.-J. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV Source document Applied Physics Letters. Vol. 107 (2015), 193506 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2015 DOI 10.1063/1.4935223 article
Title Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV Co-authors Válik Lukáš 1990 SAVELEK - Elektrotechnický ústav SAV Kotara P. Zhytnytska R. Brunner F. Hilt O. Bahat-Treidel E. Würfl H.-J. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV Source document ASDAM 2014 : The 10th International Conference on Advanced Semiconductor Devices and Microsystems. P. 121-124. - : IEEE, 2014 / Breza Juraj ; Donoval Daniel ; Vavrinský E. Category AFC - Published papers from foreign scientific conferences Year 2014 article