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Records found: 157  
Your query: Author Sysno = "^sav_un_auth 0000216^"
  1. TitleExperimental analysis of the electric field distribution in semi-insulating GaAs detectors via alpha particles
    Author Kurucová N.
    Co-authors Šagátová A.
    Pavlovič M.
    Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV
    Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV
    Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV
    Škriniarová Jaroslava SAVINFO - Ústav informatiky SAV
    Predanocy Martin 1984- SAVINFO - Ústav informatiky SAV
    Source document Journal of Instrumentation. Vol. 19 (2024), art. no. C03049
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2024
    DOI 10.1088/1748-0221/19/03/C03049
    article

    article

  2. TitleEffect of thermal annealing on 4H-SiC radiation detector
    Author Kotorová S.
    Co-authors Šagátová A.
    Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV
    Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV
    Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV
    Action APVV 18-0273. vedúci projektu Zaťko, Bohumír : 2019-2023
    APVV 18-0243. vedúci projektu Zaťko, Bohumír : 2019-2022
    VEGA 2/0084/20. vedúci projektu Zaťko, Bohumír : 2020-2023
    Source document AIP Conference Proceedings : Applied Physics of Condensed Matter (APCOM 2022), 22–24 June 2022, Štrbské Pleso, Slovak Republic. Vol. 2778 (2023), no. 060004
    CategoryADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok z podujatia
    Year2023
    DOI 10.1063/5.0136176
    File nameAccessSizeDownloadedTypeLicense
    Effect of thermal annealing on 4H-SiC radiation detector.pdfNeprístupný/archív946.3 KB0Publisher's version
    article

    article

  3. TitleSpectrometric performance of 4H-SiC detectors after neutron irradiation
    Author Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV
    Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV
    Gurov Y.B.
    Rozov S.V.
    Evseev S.A.
    Bulavin M.V.
    Zamiatin N.I.
    Kopylov Y.A.
    Sekáčová Mária 1955 SAVELEK - Elektrotechnický ústav SAV
    Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV
    Action APVV 18-0273. vedúci projektu Zaťko, Bohumír : 2019-2023
    APVV 18-0243. vedúci projektu Zaťko, Bohumír : 2019-2022
    VEGA 2/0084/20. vedúci projektu Zaťko, Bohumír : 2020-2023
    Source document AIP Conference Proceedings : Applied Physics of Condensed Matter (APCOM 2022), 22–24 June 2022, Štrbské Pleso, Slovak Republic. Vol. 2778 (2023), no. 060012
    CategoryADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok z podujatia
    Year2023
    DOI 10.1063/5.0135875
    File nameAccessSizeDownloadedTypeLicense
    Spectrometric performance of 4H-SiC detectors after.pdfNeprístupný/archív1.1 MB1Publisher's version
    article

    article

  4. TitleAmorphous silicon carbide thin films doped with P or B for the photoelectrochemical water splitting devices
    Author Huran Jozef 1955 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV
    Sasinková Vlasta 1954- SAVCHEM - Chemický ústav SAV
    Kleinová Angela 1960- SAVPOLYM - Ústav polymérov SAV
    Mikolášek Miroslav
    Kobzev Aexander P.
    Action VEGA 2/0084/20. vedúci projektu Zaťko, Bohumír : 2020-2023
    Source document Current Applied Physics. Vol. 34 (2022), pp. 101-106
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2022
    DOI 10.1016/j.cap.2021.11.014
    File nameAccessSizeDownloadedTypeLicense
    Amorphous silicon carbide thin films doped with P or B for the.pdfNeprístupný/archív1.2 MB3Publisher's version
    article

    article

  5. TitleRadiation resistance of SiC detectors after neutron irradiation
    Author Gurov J.B.
    Co-authors Evseev S.A.
    Zamyatin N.I.
    Kopylov Y.A.
    Rozov S.V.
    Sandukovsky V.G.
    Streletskaia E.A.
    Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV
    Zaťko Bohumír 1973
    Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV
    Source document Physics of Particles and Nuclei Letters. Vol. 19 (2022), p. 740-743
    CategoryADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2023
    DOI 10.1134/S1547477122060115
    File nameAccessSizeDownloadedTypeLicense
    Radiation Resistance of SiC Detectors after Neutron Irradiation.pdfNeprístupný/archív520.9 KB1Publisher's version
    article

    article

  6. TitleFrom a single silicon carbide detector to pixelated structure for radiation imaging camera
    Author Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Šagátová A.
    Gál Norbert 1990 SAVELEK - Elektrotechnický ústav SAV
    Novák A.
    Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV
    Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV
    Polansky Š.
    Jakubek J.
    Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV
    Source document Journal of Instrumentation. Vol. 17 (2022), no. C12005
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2022
    DOI 10.1088/1748-0221/17/12/C12005
    article

    article

  7. TitleStudy of the pulse height defect of 4H-SiC Schottky barrier detectors in heavy ion detection
    Author Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV
    Šagátová A.
    Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV
    Ivanov O.M.
    Sekáčová Mária 1955 SAVELEK - Elektrotechnický ústav SAV
    Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV
    Gurov J.B.
    Skuratov V.A.
    Source document AIP Conference Proceedings. Vol. 2411 (2021), no. 070007
    CategoryADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2021
    DOI 10.1063/5.0067353
    File nameAccessSizeDownloadedTypeLicense
    Study of the Pulse Height Defect of 4H-SiC Schottky Barrier.pdfavailable1.1 MB2Publisher's version
    article

    article

  8. TitleHigh-energy electron irradiation of semiconductor detectors and radiation hardness comparison
    Author Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Šagátová A.
    Sedlačková K.
    Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV
    Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV
    Source document Progress in applied surface, interface and thin film science – solar renewable energy news 2021. SURFINT – SREN VII : extended abstract book. P. 77-78. - Bratislava : Comenius Univ., 2021 / Brunner Róbert 1954
    CategoryAFH - Abstracts of papers from domestic conferences
    Year2021
    article

    article

  9. TitleStudy of Schottky barrier detectors based on a high quality 4H-SiC epitaxial layer with different thickness
    Author Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV
    Šagátová A.
    Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV
    Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV
    Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV
    Halahovets Yuriy 1982- SAVFYZIK - Fyzikálny ústav SAV
    Rozov S.V.
    Sandukovskij V.G.
    Source document Applied Surface Science. Vol. 536, no. 14 (2021), no. 147801
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2021
    DOI 10.1016/j.apsusc.2020.147801
    File nameAccessSizeDownloadedTypeLicense
    Study of Schottky barrier detectors based on a high quality 4H SiC epitaxial.pdfNeprístupný/archív583.7 KB2Publisher's version
    Study of Schottky barrier detectors based on a high quality 4H SiC epitaxial.pdfavailable583.7 KB1Author's preprint
    article

    article

  10. TitleInfluence of SI GaAs base material on detector radiation hardness against high-energy electrons
    Author Šagátová A.
    Co-authors Novák A.
    Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV
    Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV
    Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV
    Source document Progress in applied surface, interface and thin film science – solar renewable energy news 2021. SURFINT – SREN VII : extended abstract book. P. 67-68. - Bratislava : Comenius Univ., 2021 / Brunner Róbert 1954
    CategoryAFH - Abstracts of papers from domestic conferences
    Year2021
    article

    article


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