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Records found: 21  
Your query: Author Sysno = "^sav_un_auth 0146887^"
  1. Title3D thermal simulation of GaAs-based HEMT on foreign substrates
    Author Chvála A.
    Co-authors Kováč Jaroslav
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV
    Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV
    Marek Ján
    Florovič M.
    Source document Microelectronic Devices and Technologies : Proceedings of the 5th International Conferenceon Microelectronic Devices and Technologies (MicDAT '2023). 20-22 September 2023, Funchal (Madeira Island), Portugal. P. 20-23. - Barcelona : IFSA Publishing, 2023 / Yurish S.Y.
    CategoryAFC - Published papers from foreign scientific conferences
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok z podujatia
    Year2023
    article

    article

  2. TitleFabrication and characterization of Si/SiO2/TiO2 /ZnO heterostructures from sputtered and oxidized Ti-film
    Author Kováč Jaroslav
    Co-authors Florovič M.
    Vincze A.
    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV
    Novotný I.
    Mikolášek M.
    Škriniarová Jaroslava
    Source document Journal of Electrical Engineering. Vol. 68, iss. 7 (2017), p. 58-61
    CategoryADNA - Scientific papers in domestic impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2018
    DOI 10.1515/jee-2017-0057
    article

    article

  3. TitleTemperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors
    Author Florovič M.
    Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV
    Kováč Jaroslav
    Kordoš Peter
    Source document Semiconductor Science and Technology. Vol. 32 (2017), art. no. 025017
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2017
    DOI 10.1088/1361-6641/aa5253
    File nameAccessSizeDownloadedTypeLicense
    Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors.pdfNeprístupný/archív915.3 KB1Publisher's version
    article

    article

  4. TitleTrap analysis in GaN-based heterostructures using current transients measurements
    Author Florovič M.
    Co-authors Škriniarová Jaroslava
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Kováč Jaroslav
    Kordoš Peter
    Source document ASDAM 2016 : the 11th International Conference on Advanced Semiconductor Devices and Microsystems. P. 185-188. - : IEEE, 2016 / Haščík Štefan 1956 ; Dzuba Jaroslav 1987 ; Vanko Gabriel 1981
    CategoryADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2016
    DOI 10.1109/ASDAM.2016.7805926
    article

    article

  5. TitleElectrical properties of recessed AlGaN/GaN Schottky diodes under off-state stress
    Author Florovič M.
    Co-authors Kováč Jaroslav
    Benko P.
    Chvála A.
    Škriniarová Jaroslava
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Source document / Pudiš D. ; Šušlík Ľ. ; Kováč J., jr. ; Flickyngerová S. ; Lettrichová I. Proceedings of ADEPT : 2nd International Conference on Advances in Electronic and Photonic Technologies. P. 144-147. - Žilina : University of Žilina, 2014 ; International Conference on Advances in Electronic and Photonic Technologies ADEPT 2014
    CategoryAFD - Published papers from domestic scientific conferences
    Year2014
    article

    article

  6. TitleOn-state stress investigation of AlGaN/GaN HEMT
    Author Florovič M.
    Co-authors Kováč Jaroslav
    Hronec P.
    Škriniarová Jaroslava
    Donoval D.
    Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV
    Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV
    Source document / Pudiš D. ; Lettrichová I. ; Šušlik Ľ. ; Kováč Jaroslav Jr. ; Vincze A. Proceedings of ADEPT : 1st International Conference on Advances in Electronic and Photonic Technologies. P. 44-47. - Žilina : University of Žilina, 2013
    CategoryAFD - Published papers from domestic scientific conferences
    Year2013
    article

    article

  7. TitleInfluence of gate recess etching on electrical properties of AlGaN/GaN HEMTs
    Author Benko P.
    Co-authors Kováč Jaroslav
    Florovič M.
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Škriniarová Jaroslava
    Harmatha L.
    Source document / Pudiš D. ; Lettrichová I. ; Šušlik Ľ. ; Kováč Jaroslav Jr. ; Vincze A. Proceedings of ADEPT : 1st International Conference on Advances in Electronic and Photonic Technologies. P. 32-35. - Žilina : University of Žilina, 2013
    CategoryAFD - Published papers from domestic scientific conferences
    Year2013
    article

    article

  8. TitleLow temperature investigation of electrical and optical properties of InGaAsN/Gas QW Schottky barrier photodetectors
    Author Florovič M.
    Co-authors Kováč Jaroslav
    Sciana B
    Radziewicz D.
    Pucicki D.
    Zborowska-Lindert I.
    Tlaczala M.
    Vávra Ivo 1949 SAVELEK - Elektrotechnický ústav SAV
    Source document ASDAM 2012 : conference proceedings. P. 163-166. - Piscataway : IEEE, 2012 / Haščík Štefan 1956 ; Osvald Jozef 1953 ; International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2012
    CategoryAFC - Published papers from foreign scientific conferences
    Year2012
    article

    article

  9. TitleElectrical and optical characterization of Ni/Al0,3Ga0,7N/GaN Schottky barrier diodes
    Author Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Co-authors Škriniarová Jaroslava
    Chvála A.
    Florovič M.
    Kováč Jaroslav
    Donoval D.
    Source document Journal of Electronics Materials. Vol. 41 (2012), p. 3017-3020
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2012
    DOI 10.1007/s11664-012-2184-5
    article

    article

  10. TitleInfluence of layer structure on electrical properties of AlGaN/GaN HEMTs
    Author Benko P.
    Co-authors Kováč Jaroslav
    Chvála A.
    Florovič M.
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Škriniarová Jaroslava
    Harmatha L.
    Source document ASDAM 2012 : conference proceedings. P. 41-44. - Piscataway : IEEE, 2012 / Haščík Štefan 1956 ; Osvald Jozef 1953 ; International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2012
    CategoryAFC - Published papers from foreign scientific conferences
    Year2012
    article

    article


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