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Records found: 24  
Your query: Author Sysno = "^sav_un_auth 0001976^"
  1. TitleNovel double-level-gate technology
    Author Fox A.
    Co-authors Mikulics M.
    Hardtdegen H.
    Trellenkamp St.
    Arango Y.C.
    Grützmacher D.
    Sofer Z.
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Marso M.
    Source document ASDAM 2014 : The 10th International Conference on Advanced Semiconductor Devices and Microsystems. P. 89-92. - : IEEE, 2014 / Breza Juraj ; Donoval Daniel ; Vavrinský E.
    CategoryAFC - Published papers from foreign scientific conferences
    Year2014
    article

    article

  2. TitleReduction of skin effect losses in double-level-T-gate structure
    Author Mikulics M.
    Co-authors Hardtdegen H.
    Arango Y.C.
    Adam Roman
    Fox A.
    Grützmacher D.
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Stanček S.
    Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Sofer Z.
    Juul L.
    Marso M.
    Source document Applied Physics Letters. Vol. 105, (2014), 232102
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2014
    DOI 10.1063/1.4903468
    article

    article

  3. TitleElectrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate
    Author Mikulics M.
    Co-authors Fox A.
    Marso M.
    Grützmacher D.
    Donoval D.
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Source document Vacuum. Vol. 86, (2012), p. 754-756
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2012
    DOI 10.1016/j.vacuum.2011.07.016
    article

    article

  4. TitleResidual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
    Author Mikulics M.
    Co-authors Hartdegen H.
    Winden A.
    Fox A.
    Marso M.
    Sofer Z.
    Luth H.
    Grützmacher D.
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Source document Physica status solidi C. Current topics in solid state physics. Vol. 9, (2012), p. 911-914
    CategoryADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2012
    DOI 10.1002/pssc.201100408
    article

    article

  5. TitleGaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD
    Author Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Co-authors Fox A.
    Kúdela Róbert 1952 SAVELEK - Elektrotechnický ústav SAV
    Mikulics M.
    Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Source document Semiconductor Science and Technology. Vol. 27, (2012), 115002
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2012
    DOI 10.1088/0268-1242/27/11/115002
    article

    article

  6. TitleTowards future III-nitride based THz OEICs in the UV range
    Author Fox A.
    Co-authors Mikulics M.
    Winden A.
    Hartdegen H.
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Adam Roman
    Sobolewski R.
    Marso M.
    Grützmacher D.
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Source document ASDAM 2012 : conference proceedings. P. 191-194. - Piscataway : IEEE, 2012 / Haščík Štefan 1956 ; Osvald Jozef 1953 ; International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2012
    CategoryAFC - Published papers from foreign scientific conferences
    Year2012
    article

    article

  7. TitleRF performance of InAlN/GaN HFETs and MOSHFETs with fT x LG up to 21 GHz • µm
    Author Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Co-authors Mikulics M.
    Fox A.
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Čičo Karol SAVELEK - Elektrotechnický ústav SAV
    Carlin J.-F.
    Grandjean N.
    Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV
    Source document . Vol. 31, (2010), p. 180-182 IEEE Electron Devices Letters
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2010
    DOI 10.1109/LED.2009.2038078
    article

    article

  8. TitleComparison of AlGaN/GaN HFETs and MOSHFETs in prospect of oscillator design
    Author Fox A.
    Co-authors Mikulics M.
    Strang B.
    Marso M.
    Grützmacher D.
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Source document ASDAM 2010 : proceedings of the 8th International Conference on Advanced Semiconductor Devices and Microsystems. P. 159-162. - Piscataway : IEEE, 2010 / Breza J. ; Donoval D. ; Vavrinský E.
    CategoryAEC - Scientific papers in foreign peer-reviewed proceedings, monographs
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok
    Year2010
    article

    article

  9. TitleCharacterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements
    Author Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV
    Eickelkamp M.
    Fox A.
    Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Vescan A.
    Grützmacher D.
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Source document Semiconductor Science and Technology. Vol. 24, (2009), 075014
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2009
    article

    article

  10. TitleImproved high-frequency performance of Al2O3/AlGaN/GaN MISHFETs compared to AlGaN/GaN HFETs
    Author Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Co-authors Fox A.
    Eickelkamp M.
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Grützmacher D.
    Vescan A.
    Source document / Pudiš D. ; Harmatha L. ; Müllerová J. ; Jamnický I. . P. 25-28 APCOM 2009 : proceedings of the 15th International Conference on Applied Physics of Condensed Matter, held in KRÚ Bystrá, Liptovský Ján, Slovak Republic, June 24-26, 2009. - Žilina : University of Žilina, 2009
    CategoryAED - Scientific papers in domestic peer-reviewed proceedings, monographs
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok
    Year2009
    article

    article


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