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Title Vertical GaN transistor with semi-insulating channel Author Šichman Peter SAVELEK - Elektrotechnický ústav SAV Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV Hudec Boris SAVELEK - Elektrotechnický ústav SAV Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Hashizume T. Chvála A. Šatka A. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV Source document Physica Status Solidi A : applications and materials science : Special Issue: Nitride Semiconductors. Vol. 220 (2023), no. SI2200776 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok z podujatia Year 2023 DOI 10.1002/pssa.202200776 File name Access Size Downloaded Type License Vertical GaN Transistor with Semi-Insulating Channe.pdf Neprístupný/archív 1 MB 0 Publisher's version Title Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation Author Asubar J.T. Co-authors Yatabe Z. Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV Hashizume T. Source document Journal of Applied Physics. Vol. 129 (2021), no. 121102 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2021 DOI 10.1063/5.0039564 File name Access Size Downloaded Type License Controlling surface interface states in GaNbased transistors.pdf available 9.7 MB 6 Publisher's version Title Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV Co-authors Drobný J. SAVELEK - Elektrotechnický ústav SAV Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV Hashizume T. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV Action VEGA 2/0109/17. vedúci projektu Gregušová, Dagmar : 2017-2020 Source document Materials science in semiconductor processing. Vol. 91 (2019), p. 356-361 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2019 DOI 10.1016/j.mssp.2018.12.012 Title InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region Author Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV Co-authors Tóth L. Pohorelec Ondrej SAVELEK - Elektrotechnický ústav SAV Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Cora Ildikó Fogarassy Zsolt Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV Seifertová Alena 1958 SAVELEK - Elektrotechnický ústav SAV Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV Oyobiki T. Pécz B. Hashizume T. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV Action VEGA 2/0012/18. vedúci projektu Kuzmík, Ján : 2018-2021 Source document Japanese Journal of Applied Physics. Vol. 58 (2019), no. SCCCD21 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2019 DOI 10.7567/1347-4065/ab06b8 URL URL link File name Access Size Downloaded Type License InGaN (GaN) AlGaN GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region.pdf Neprístupný/archív 855.4 KB 0 Publisher's version Title State of the art on gate insulation and surface passivation for GaN-based power HEMTs Author Hashizume T. Co-authors Nishiguchi K. Kaneki S. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV Yatabe Z. Source document Materials science in semiconductor processing. Vol. 78 (2018), p. 85-95 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2018 DOI 10.1016/j.mssp.2017.09.028 File name Access Size Downloaded Type License State of the art on gate insulation and surface passivation for GaN-based power HEMTs.pdf available 1.6 MB 1 Publisher's version Title Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors Author Matys M. Co-authors Nishiguchi K. Adamowicz J.B. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV Hashizume T. Source document Journal of Applied Physics. Vol. 124 (2018), no. 224502 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2018 DOI 10.1063/1.5056194 Title Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction Author Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV Matys M. Yatabe Z. Kordoš Peter Hashizume T. Source document Semiconductor Science and Technology. Vol. 32 (2017), no. 045018 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2017 DOI 10.1088/1361-6641/aa5fcb File name Access Size Downloaded Type License Influence of oxygen-plasma treatment on AlGaNGaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2.pdf Neprístupný/archív 1.5 MB 1 Publisher's version Title Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV Co-authors Válik Lukáš 1990 SAVELEK - Elektrotechnický ústav SAV Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV Hashizume T. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV Source document ASDAM 2016 : the 11th International Conference on Advanced Semiconductor Devices and Microsystems. P. 1-4. - : IEEE, 2016 / Haščík Štefan 1956 ; Dzuba Jaroslav 1987 ; Vanko Gabriel 1981 Category ADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2016 DOI 10.1109/ASDAM.2016.7805881 Title Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures Author Matys M. Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV Adamowicz J.B. Yatabe Z. Hashizume T. Source document Journal of Applied Physics. Vol. 119 (2016), art. no. 205304 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2016 DOI 10.1063/1.4952708 URL URL link File name Access Size Downloaded Type License Characterization of capture cross sections of interface states in dielectricIII-nitride heterojunction structures.pdf available 1.9 MB 1 Publisher's version Title On the origin of interface states at oxide/III-nitride heterojunction interfaces Author Matys M. Co-authors Adamowicz J.B. Domanowska A. Michalewicz A. Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV Akazawa M. Yatabe Z. Hashizume T. Source document Journal of Applied Physics. Vol. 120 (2016), no. 225305 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2016 DOI 10.1063/1.4971409 File name Access Size Downloaded Type License On the origin of interface states at oxideIII-nitride heterojunction interfaces.pdf Neprístupný/archív 3.1 MB 1 Publisher's version