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Title Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors Author Eickelkamp M. Co-authors Weingarten M. Khoshroo L.R. Ketteniss N. Behmenburg H. Heuken M. Donoval D. Chvála A. Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Kalisch H. Vescan A. Source document Journal of Applied Physics. Vol. 110, (2011), 084501 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2011 DOI 10.1063/1.3647589 
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