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Title Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer Author Mikulics M. Co-authors Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV Gaži Štefan 1948 SAVELEK - Elektrotechnický ústav SAV Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV Sofer Z. Mayer J. Hartdegen H. Source document Semiconductor Science and Technology. Vol. 36 (2021), no. 095040 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2021 DOI 10.1088/1361-6641/ac1a28 File name Access Size Downloaded Type License Local increase in compressive strain (GaN) in gate recessed AlGaNGaN MISHFET structures induced by an amorphous AlN dielectric layer.pdf available 2.7 MB 0 Publisher's version 
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Title Conditioning nano-LEDs in arrays by laser-micro-annealing: the key to their performance improvement Author Mikulics M. Co-authors Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV Sofer Z. Winden A. Trellenkamp St. Moers J. Mayer J. Hardtdegen H. Source document Applied Physics Letters. Vol. 118 (2021), no. 04310 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2021 DOI 10.1063/5.0038070 File name Access Size Downloaded Type License Conditioning nano-LEDs in arrays by laser-micro-annealing.pdf Neprístupný/archív 1.8 MB 4 Publisher's version article
Title Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction Author Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV Matys M. Yatabe Z. Kordoš Peter Hashizume T. Source document Semiconductor Science and Technology. Vol. 32 (2017), no. 045018 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2017 DOI 10.1088/1361-6641/aa5fcb File name Access Size Downloaded Type License Influence of oxygen-plasma treatment on AlGaNGaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2.pdf Neprístupný/archív 1.5 MB 1 Publisher's version article
Title Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment Author Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV Co-authors Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV Kúdela Róbert 1952 SAVELEK - Elektrotechnický ústav SAV Mičušík Matej 1977- SAVPOLYM - Ústav polymérov SAV Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV Válik Lukáš 1990 SAVELEK - Elektrotechnický ústav SAV Greguš J. Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV Kordoš Peter Source document Applied Surface Science. Vol. 395 (2017), p. 140-144 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2017 DOI 10.1016/j.apsusc.2016.07.019 article
Title Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors Author Florovič M. Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV Kováč Jaroslav Kordoš Peter Source document Semiconductor Science and Technology. Vol. 32 (2017), art. no. 025017 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2017 DOI 10.1088/1361-6641/aa5253 File name Access Size Downloaded Type License Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors.pdf Neprístupný/archív 915.3 KB 1 Publisher's version article
Title Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes Author Mikulics M. Co-authors Arango Y.C. Winden A. Adam Roman Hardtdegen A. Grützmacher D. Plinski E. Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV Kordoš Peter Moonshiram A. Marso M. Sofer Z. Luth H. Hardtdegen H. Source document Applied Physics Letters. Vol. 108 (2016), art. no. 061107 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2016 DOI 10.1063/1.4941923 File name Access Size Downloaded Type License Direct electro optical pumping for hybrid CdSe nanocrystal.pdf Neprístupný/archív 3 MB 0 Publisher's version article
Title Trap analysis in GaN-based heterostructures using current transients measurements Author Florovič M. Co-authors Škriniarová Jaroslava Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV Kováč Jaroslav Kordoš Peter Source document ASDAM 2016 : the 11th International Conference on Advanced Semiconductor Devices and Microsystems. P. 185-188. - : IEEE, 2016 / Haščík Štefan 1956 ; Dzuba Jaroslav 1987 ; Vanko Gabriel 1981 Category ADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2016 DOI 10.1109/ASDAM.2016.7805926 article
Title III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap Author Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV Co-authors Kúdela Róbert 1952 SAVELEK - Elektrotechnický ústav SAV Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV Gaži Štefan 1948 SAVELEK - Elektrotechnický ústav SAV Dérer Ján 1948 SAVELEK - Elektrotechnický ústav SAV Liday J. Vogrinčič P. Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV Source document Journal of Vacuum Science and Technology B. Vol. 33, (2015), 01A111, Microelectronics and Nanometer Structures Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2015 DOI 10.1116/1.4905938 article
Title Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Source document Materials science in semiconductor processing. Vol. 31, (2015), p. 525-529 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2015 DOI 10.1016/j.mssp.2014.11.052 article
Title Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Source document Physica status solidi B. Basic solid state physics. Vol. 252 (2015), p. 996-1000 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2015 DOI 10.1002/pssb.201451468 article