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Records found: 8  
Your query: Author Sysno = "^sav_un_auth 0012593^"
  1. TitleGaAs photodetectors prepared by high-energy and high-dose nitrogen implantation
    Author Mikulics M.
    Co-authors Marso M.
    Mantl S.
    Lüth Hans
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Source document Applied Physics Letters. Vol. 89, (2006), 091103
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2006
    article

    article

  2. TitleComparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHEFTs
    Author Heidelberg G.
    Co-authors Bernát J.
    Fox A.
    Marso M.
    Lüth Hans
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Source document Physica Status Solidi A. Vol. 203, (2006), p. 1876-1881, Applied Research
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2006
    article

    article

  3. TitleComparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures
    Author Marso M.
    Co-authors Fox A.
    Heidelberg G.
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Lüth Hans
    Source document ASDAM 2006 : proceedings of the 6th International Conference on Advanced Semiconductor Devices and Microsystems. P. 229-232. - Piscataway : IEEE, 2006 / Breza J. ; Donoval D. ; Vavrinský E.
    CategoryAEC - Scientific papers in foreign peer-reviewed proceedings, monographs
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok
    Year2006
    article

    article

  4. TitleTechnology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric
    Author Heidelberg G.
    Co-authors Roeckerath M.
    Steins R.
    Stefaniak M.
    Fox A.
    Schubert J.
    Kaluza N.
    Marso M.
    Lüth Hans
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Source document ASDAM 2006 : proceedings of the 6th International Conference on Advanced Semiconductor Devices and Microsystems. P. 241-244. - Piscataway : IEEE, 2006 / Breza J. ; Donoval D. ; Vavrinský E.
    CategoryAEC - Scientific papers in foreign peer-reviewed proceedings, monographs
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok
    Year2006
    article

    article

  5. TitleTraveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs
    Author Mikulics M.
    Co-authors Michael E.
    Marso M.
    Lepsa M.
    van der Hart A.
    Lüth Hans
    Dewald A.
    Stanček S.
    Mozolik M.
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Source document Applied Physics Letters. Vol. 89, (2006), p. 071103
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2006
    article

    article

  6. TitleTravelling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs
    Author Mikulics M.
    Co-authors Michael E.
    Schieder R.
    Stutzki J.
    Güsten R.
    Marso M.
    van der Hart A.
    Bochem H.P.
    Lüth Hans
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Source document . Vol. 88, (2006), p. 041118 Applied Physics Letters. - : American Institute of Physics
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2006
    article

    article

  7. TitleImpact of surface treatment under the gate on the current collapse of unpassivated AlGaN/GaN heterostructure field-effect transistors
    Author Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Co-authors Bernát J.
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Marso M.
    Lüth Hans
    Source document . Vol. 21 (2006), p. 67-71 Semiconductor Science and Technology
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2006
    article

    article

  8. TitleComparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHEFT layer structures
    Author Marso M.
    Co-authors Fox A.
    Heidelberg G.
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Lüth Hans
    Source document . Vol. 27, (2006), p. 945-947 IEEE Electron Devices Letters
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2006
    article

    article



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