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Title 3C-SiC growth on 6H-SiC (0001) substrates Author Maťko Igor 1963 SAVFYZIK - Fyzikálny ústav SAV Co-authors Chenevier B. Audier M. Madar R. Diani M. Simon L. Kubler L. Aubel D. Source document Materials Science Forum. Vol. 389 (2002), p. 315-318 Category ADC Year 2002 
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Title TEM analysis of an additional metal-rich component at the C49-C54 transformation in Ti/Si thin films capped with TiN Author Maťko Igor 1963 SAVFYZIK - Fyzikálny ústav SAV Co-authors Chenevier B. Chaix-Pluchery O. Madar R. La Via F. Source document Thin Solid Films. Vol. 408 (2002), p. 123-127 Category ADC Year 2002 article
Title Crystal growth of 3C-SiC polytype on 6H-SiC (0001) substrate Author Diani M. Co-authors Simon L. Kubler L. Aubel D. Maťko Igor 1963 SAVFYZIK - Fyzikálny ústav SAV Chenevier B. Madar R. Audier M. Source document Journal of Crystal Growth. Vol. 235 (2002), p. 95-102 Category ADC Year 2002 article
Title Solid-phase epitaxial growth of bulk SiC single crystals Author Pernot E. Co-authors Anikin M. Pons M. Chaix-Pluchery O. Baillet F. Maťko Igor 1963 SAVFYZIK - Fyzikálny ústav SAV Madar R. Source document Materials Science Forum. Vol. 389 (2002), p. 143-146 Category ADC Year 2002 article
Title Origin of the C49-C54 volume anomaly in TiSi2 thin films Author Chenevier B. Co-authors Chaix-Pluchery O. Maťko Igor 1963 SAVFYZIK - Fyzikálny ústav SAV Madar R. La Via F. Source document Microelectronic Engineering. Vol. 64 (2002), p. 181-187 Category ADC Year 2002 article
Title Structural investigations of the C49-C54 transformation in TiSi2 thin films Author Chenevier B. Co-authors Chaix-Pluchery O. Maťko Igor 1963 SAVFYZIK - Fyzikálny ústav SAV Madar R. La Via F. Source document Microelectronic Engineering. Vol. 55, no. 1-4 (2001), p. 115-122 Category ADC Year 2001 article