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Records found: 11  
Your query: Author Sysno = "^sav_un_auth 0040130^"
  1. TitleSemi-insulating GaN for vertical structures: role of substrate selection and growth pressure
    Author Šichman Peter SAVELEK - Elektrotechnický ústav SAV
    Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV
    Priesol J.
    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV
    Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV
    Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV
    Vincze A.
    Chvála A.
    Marek J.
    Šatka A.
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Action APVV 18-0054. vedúci projektu Kuzmík, Ján : 2019-2022
    VEGA 2/0012/18. vedúci projektu Kuzmík, Ján : 2018-2021
    Source document Materials science in semiconductor processing. Vol. 118 (2020), no. 105203
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2020
    DOI 10.1016/j.mssp.2020.105203
    File nameAccessSizeDownloadedTypeLicense
    Semi-insulating GaN for vertical structures role of substrate selection and growth.pdfavailable1.4 MB8Author's preprint
    Semi-insulating GaN for vertical.pdfNeprístupný/archív1.2 MB1Publisher's version
    article

    article

  2. TitleDevice and circuit models of monolithic InAlN/GaN NAND and NOR logic cells comprising D- and E-mode HEMTs
    Author Chvála A.
    Co-authors Nagy L.
    Marek J.
    Priesol J.
    Donoval D.
    Šatka A.
    Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Source document Journal of Circuits, Systems and Computers : Special Issue on Design, Technology, and Test of Integrated Circuits and Systems. Vol. 19 (2019), no. 1940009
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2019
    DOI 10.1142/S0218126619400097
    File nameAccessSizeDownloadedTypeLicense
    Device and Circuit Models of Monolithic InAlN.pdfNeprístupný/archív1.2 MB0Publisher's version
    article

    article

  3. TitleCharacterization of monolithic InAlN/GaN NAND logic cell supported by circuit and device simulations
    Author Chvála A.
    Co-authors Nagy L.
    Marek J.
    Priesol J.
    Donoval D.
    Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Šatka A.
    Source document IEEE Transactions on Electron Devices. Vol. 65 (2018), p. 2666-2669
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2018
    DOI 10.1109/TED.2018.2828464
    article

    article

  4. TitleSimulation analysis of InAlN/GaN monolithic NAND logic cell
    Author Chvála A.
    Co-authors Nagy L.
    Marek J.
    Priesol J.
    Donoval D.
    Vilhan Martin SAVMER - Ústav merania SAV
    Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Šatka A.
    Source document ASDAM 2018 : The Twelfth International Conference on Advanced Semiconductor Devices and Microsystems. P. 167-170. - : IEEE, 2018 / Breza J. ; Donoval D. ; Vavrinský E. ; ASDAM 2018 The Twelfth International Conference on Advanced Semiconductor Devices and Microsystems
    CategoryAFD - Published papers from domestic scientific conferences
    Year2018
    DOI 10.1109/ASDAM.2018.8544508
    article

    article

  5. TitleTechnology and performance of E/D-mode InAlN/GaN HEMTs for mixed-signal electronics
    Author Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Chvála A.
    Marek J.
    Šatka A.
    Source document 2018 22nd International Microwave and Radar Conference (MIKON) : Poznan May 14-17, 2018, Poland. P. 440-441. - : Warsaw University of Technology, 2018
    CategoryADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2018
    DOI 10.23919/MIKON.2018.8405249
    article

    article

  6. TitleCharacterization of monolithic InAlN/GaN NAND logic cell supported by device simulation
    Author Chvála A.
    Co-authors Nagy L.
    Marek J.
    Priesol J.
    Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Príbytný P.
    Bernát M.
    Donoval D.
    Šatka A.
    Source document ADEPT 2017 : proceedings of the 5th International Conference on Advances in Electronic and Photonic Technologies, Podbanské, High Tatras, Slovakia, June 19-22, 2017. P. 40-43. - Žilina : University of Žilina, 2017 / Lettrichová I. ; Šušlik Ľ. ; Kováč Jaroslav Jr.
    CategoryAFD - Published papers from domestic scientific conferences
    Year2017
    DOI 10.1109/TED.2018.2828464
    article

    article

  7. TitlePost-deposition annealing and thermal stability of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs
    Author Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV
    Seifertová Alena 1958 SAVELEK - Elektrotechnický ústav SAV
    Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV
    Šoltýs Ján 1977 SAVELEK - Elektrotechnický ústav SAV
    Šatka A.
    Nagy L.
    Chvála A.
    Marek J.
    Priesol J.
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Source document ASDAM 2016 : the 11th International Conference on Advanced Semiconductor Devices and Microsystems. P. 177-180. - : IEEE, 2016 / Haščík Štefan 1956 ; Dzuba Jaroslav 1987 ; Vanko Gabriel 1981
    CategoryADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2016
    DOI 10.1109/ASDAM.2016.7805924
    article

    article

  8. TitleTechnology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics
    Author Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV
    Seifertová Alena 1958 SAVELEK - Elektrotechnický ústav SAV
    Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV
    Šoltýs Ján 1977 SAVELEK - Elektrotechnický ústav SAV
    Šatka A.
    Nagy L.
    Chvála A.
    Marek J.
    Carlin J.-F.
    Grandjean N.
    Konstantinidis G.
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Source document Semiconductor Science and Technology. Vol. 31 (2016), no. 065011
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2016
    DOI 10.1088/0268-1242/31/6/065011
    File nameAccessSizeDownloadedTypeLicense
    Technology of integrated self-aligned.pdfNeprístupný/archív1.1 MB1Publisher's version
    article

    article

  9. TitleTrapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator
    Author Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV
    Marek J.
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Source document Semiconductor Science and Technology. Vol. 29, (2014), 045003
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2014
    DOI 10.1088/0268-1242/29/4/045003
    article

    article

  10. TitleSimulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors
    Author Molnár M.
    Co-authors Donoval D.
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Marek J.
    Chvála A.
    Príbytný P.
    Mikolášek M.
    Rendek K.
    Palankovski V.
    Source document Applied Surface Science. Vol. 312, (2014), p. 157-161
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2014
    DOI 10.1016/j.apsusc.2014.04.078
    article

    article


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