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Records found: 251  
Your query: Author Sysno = "^sav_un_auth 0000048^"
  1. TitleInfluence of thin Ga2Se3 interlayer on the properties of GaP/PtSe2 heterojunction
    Author Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Eliáš Peter 1964 SAVELEK - Elektrotechnický ústav SAV
    Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Sojková Michaela 1980 SAVELEK - Elektrotechnický ústav SAV
    Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV
    Kováč J., jr. SAVELEK - Elektrotechnický ústav SAV
    Kováč J. SAVELEK - Elektrotechnický ústav SAV
    Action APVV 20-0264. vedúci projetu: J. Novák : 2021-2024
    APVV 20-0437. vedúci projetu: J. Novák : 2021-2024
    VEGA 2/0104/17. vedúci projektu Novák, Jozef : 2017-2020
    Source document Proceedings of ADEPT 2023 : 11th International Conference on Advances in Electronic and Photonic Technologies, held in Podbanské, High Tatras, Slovakia, June 12th – 15th, 2023. P. 24-27. - Žilina : University of Zilina in EDIS-Publishing Centre of UZ, 2023 / Jandura D. ; Lettrichová I. ; Kováč J., jr.
    CategoryAFD - Published papers from domestic scientific conferences
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok z podujatia
    Year2023
    article

    article

  2. TitleMOVPE growth of edge rich GaP surfaces for preparation of molybdenum disulphide
    Author Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV
    Eliáš Peter 1964 SAVELEK - Elektrotechnický ústav SAV
    Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Sojková Michaela 1980 SAVELEK - Elektrotechnický ústav SAV
    Kováč Jaroslav
    Kováč Jaroslav Jr.
    Action APVV 20-0437. vedúci projetu: J. Novák : 2021-2024
    APVV 20-0264. vedúci projetu: J. Novák : 2021-2024
    VEGA 2/0104/17. vedúci projektu Novák, Jozef : 2017-2020
    Source document Proceedings of ADEPT 2021 : 10th International Conference on Advances in Electronic and Photonic Technologies, Tatranská Lomnica, High Tatras, Slovakia. P. 21-24. - Žilina : University of Zilina in EDIS-Publishing Centre of UZ, 2022 / Feiler M. ; Ziman M. ; Kováčová S. ; Kováč Jaroslav Jr.
    CategoryAFD - Published papers from domestic scientific conferences
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok z podujatia
    Year2022
    File nameAccessSizeDownloadedTypeLicense
    MOVPE growth of edge rich GaP surfaces for preparation of molybdenum disulphide.pdfavailable569.3 KB2Publisher's version
    article

    article

  3. TitleInvestigation of a nanostructured GaP/MoS2 p-n heterojunction photodiode
    Author Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV
    Eliáš Peter 1964 SAVELEK - Elektrotechnický ústav SAV
    Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Sojková Michaela 1980 SAVELEK - Elektrotechnický ústav SAV
    Kováč Jaroslav Jr.
    Kováč Jaroslav
    Action APVV 20-0264. vedúci projetu: J. Novák : 2021-2024
    APVV 20-0437. vedúci projetu: J. Novák : 2021-2024
    Source document AIP Advances. Vol. 12 (2022), no. 065004
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2022
    DOI 10.1063/5.0089842
    File nameAccessSizeDownloadedTypeLicense
    Investigation of a nanostructured GaP.pdfavailable4.6 MB2Publisher's version
    article

    article

  4. TitleOptical properties of GaAs-based LED with Fresnel structure in the surface
    Author Lettrichová I.
    Co-authors Pudiš D.
    Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV
    Gaso P.
    Šušlik Ľ.
    Jandura D.
    Ďurišová J.
    Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Source document Proceedings of the SPIE. Vol. 10142 (2022), no. 101421P
    CategoryADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2016
    DOI 10.1117/12.2264454
    article

    article

  5. TitleLocal increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer
    Author Mikulics M.
    Co-authors Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Gaži Štefan 1948 SAVELEK - Elektrotechnický ústav SAV
    Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Sofer Z.
    Mayer J.
    Hartdegen H.
    Source document Semiconductor Science and Technology. Vol. 36 (2021), no. 095040
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2021
    DOI 10.1088/1361-6641/ac1a28
    article

    article

  6. TitleNear-field analysis of GaP nanocones
    Author Pudiš D.
    Co-authors Urbancová P.
    Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Kuzma A.
    Lettrichová I.
    Goraus M.
    Eliáš Peter 1964 SAVELEK - Elektrotechnický ústav SAV
    Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV
    Jandura D.
    Šušlik Ľ.
    Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Source document Applied Surface Science. Vol. 539 (2021), no. 148213
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2021
    DOI 10.1016/j.apsusc.2020.148213
    File nameAccessSizeDownloadedTypeLicense
    Near-field analysis of GaP nanocones.pdfNeprístupný/archív6.3 MB1Publisher's version
    article

    article

  7. TitleElectrical and optical properties of thin ZnO shell layers on GaP nanorods grown by pulsed laser deposition
    Author Bruncko J.
    Co-authors Kováč Jaroslav
    Michalka M.
    Netrvalová M.
    Kováč Jaroslav Jr.
    Vincze A.
    Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Source document Thin Solid Films. Vol. 725 (2021), no. 138634
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2021
    DOI 10.1016/j.tsf.2021.138634
    File nameAccessSizeDownloadedTypeLicense
    Electrical and optical properties of thin ZnO shell layers on GaP nanorods.pdfNeprístupný/archív6 MB2Publisher's version
    article

    article

  8. TitleInfluence of edge rich surface on growth of MoS2 from thin molybdenum layer
    Author Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV
    Eliáš Peter 1964 SAVELEK - Elektrotechnický ústav SAV
    Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Sojková Michaela 1980 SAVELEK - Elektrotechnický ústav SAV
    Kováč Jaroslav Jr.
    Source document Proceedings of ADEPT 2021 : 9th International Conference on Advances in Electronic and Photonic Technologies, Podbanské, High Tatras, Slovakia. P. 5-8. - Žilina : Univ. Zilina in EDIS-Publishing Centre of UZ, 2021 / Jandura D. ; Maniaková P. ; Lettrichová I. ; Kováč Jaroslav Jr.
    CategoryAFD - Published papers from domestic scientific conferences
    Year2021
    File nameAccessSizeDownloadedTypeLicense
    Influence of edge rich surface on growth of MoS2 from thin molybdenum layer.pdfavailable661.6 KB2Publisher's version
    article

    article

  9. TitleInvestigation of volume fraction of GaP nanowires by SEM characterization and spectroscopic ellipsometry
    Author Škriniarová Jaroslava
    Co-authors Hronec P.
    Chlpík J.
    Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV
    Kováč Jaroslav Jr.
    Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Andok Robert 1973- SAVINFO - Ústav informatiky SAV
    Source document Optik : International Journal for Light and Electron Optics. Vol. 234 (2021), no. 166572
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2021
    DOI 10.1016/j.ijleo.2021.166572
    File nameAccessSizeDownloadedTypeLicense
    Investigation of volume fraction of GaP nanowires by SEM.pdfNeprístupný/archív3.5 MB2Publisher's version
    article

    article

  10. TitleMOS2/GAP heterojunction - formation and properties
    Author Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV
    Eliáš Peter 1964 SAVELEK - Elektrotechnický ústav SAV
    Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Sojková Michaela 1980 SAVELEK - Elektrotechnický ústav SAV
    Kováč Jaroslav Jr.
    Kováč Jaroslav
    Source document Proceedings of the International Conference on Advances in Electronic and Photonic Technologies. P. 21-24 : ADEPT 2020. - Slovakia : University of Zilina in EDIS-Publishing Centre of UZ, 2020 / Kováč, jr. J. ; Chymo F. ; Feiler M. ; Jandura D. ; International Conference on Advances in Electronic and Photonic Technologies (ADPET 2020)
    CategoryAFD - Published papers from domestic scientific conferences
    Year2020
    File nameAccessSizeDownloadedTypeLicense
    MOS2 GAP heterojunction formation and properties.pdfavailable1.2 MB0Publisher's version
    article

    article


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