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Title Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV Co-authors Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV Source document Materials science in semiconductor processing. Vol. 140 (2022), no. 106413 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2022 DOI 10.1016/j.mssp.2021.106413 File name Access Size Downloaded Type License Temperature dependence of electrical behaviour of inhomogeneous NiAu.pdf Neprístupný/archív 2.4 MB 2 Publisher's version Title Anomalous intersection point of Schottky diodes I-V curves measured at different temperatures Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV Co-authors Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV Source document Proceedings of ADEPT 2021 : 10th International Conference on Advances in Electronic and Photonic Technologies, Tatranská Lomnica, High Tatras, Slovakia. P. 133-136. - Žilina : University of Zilina in EDIS-Publishing Centre of UZ, 2022 / Feiler M. ; Ziman M. ; Kováčová S. ; Kováč Jaroslav Jr. Category AFD - Published papers from domestic scientific conferences Category of document (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Type of document príspevok z podujatia Year 2022 File name Access Size Downloaded Type License Anomalous intersection point of Schottky diodes I-V curves measured at different temperatures.pdf available 550.9 KB 2 Publisher's version Title High-quality detectors based on 4H-SiC operated at different temperatures Author Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV Co-authors Šagátová A. Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV Gál Norbert 1990 SAVELEK - Elektrotechnický ústav SAV Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV Source document ASDAM 2022 : Conference Proceedings. P. 203-206. - : IEEE, 2022 / Marek Juraj ; Donoval D. ; Vavrinský E. ; International Conference on Advanced Semiconductor Devices and Microsystems Category AFD - Published papers from domestic scientific conferences Category of document (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Type of document príspevok z podujatia Year 2022 Title Intersection of 4H-SiC Schottky diodes I–V curves due to temperature dependent series resistance Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV Source document Semiconductor Science and Technology. Vol. 37 (2022), no. 125003 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2022 DOI 10.1088/1361-6641/ac9859 Title From a single silicon carbide detector to pixelated structure for radiation imaging camera Author Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV Co-authors Šagátová A. Gál Norbert 1990 SAVELEK - Elektrotechnický ústav SAV Novák A. Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV Polansky Š. Jakubek J. Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV Source document Journal of Instrumentation. Vol. 17 (2022), no. C12005 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2022 DOI 10.1088/1748-0221/17/12/C12005 Title Study of Schottky barrier detectors based on a high quality 4H-SiC epitaxial layer with different thickness Author Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV Co-authors Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV Šagátová A. Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV Halahovets Yuriy 1982- SAVFYZIK - Fyzikálny ústav SAV Rozov S.V. Sandukovskij V.G. Source document Applied Surface Science. Vol. 536, no. 14 (2021), no. 147801 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2021 DOI 10.1016/j.apsusc.2020.147801 File name Access Size Downloaded Type License Study of Schottky barrier detectors based on a high quality 4H SiC epitaxial.pdf Neprístupný/archív 583.7 KB 2 Publisher's version Study of Schottky barrier detectors based on a high quality 4H SiC epitaxial.pdf available 583.7 KB 1 Author's preprint Title Vertical current transport in p-GaN/AlGaN/GaN structures Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV Source document Proceedings of ADEPT 2021 : 9th International Conference on Advances in Electronic and Photonic Technologies, Podbanské, High Tatras, Slovakia. P. 29-32. - Žilina : Univ. Zilina in EDIS-Publishing Centre of UZ, 2021 / Jandura D. ; Maniaková P. ; Lettrichová I. ; Kováč Jaroslav Jr. Category AFD - Published papers from domestic scientific conferences Year 2021 File name Access Size Downloaded Type License Vertical current transport in p GaN AlGaN GaN structures.pdf available 514 KB 3 Publisher's version Title Schottky barrier height inhomogeneity in 4H-SiC surface barrier detectors Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV Co-authors Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV Action VEGA 2/0084/20. vedúci projektu Zaťko, Bohumír : 2020-2023 VEGA 2/0112/17. vedúci projektu Osvald, Jozef : 2017-2020 Source document Applied Surface Science. Vol. 533 (2020), no. 147389 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2020 DOI 10.1016/j.apsusc.2020.147389 File name Access Size Downloaded Type License Schottky barrier height inhomogeneity in 4H-SiC.pdf Neprístupný/archív 1.1 MB 2 Publisher's version Title Threshold voltage dependence of normally-off p-GaN/AlGaN/GaN transistors on structure parameters Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV Action VEGA 2/0112/17. vedúci projektu Osvald, Jozef : 2017-2020 Source document ADEPT 2019 : 7th International Conference on Advances in Electronic and Photonic Technologies. P. 51-54. - Žilina, Slovakia : University of Žilina, 2019 / Jandura D. ; Šušlik Ľ. ; Urbancová P. ; Kováč J., jr. ; ADEPT 2019 7th International Conference on Advances in Electronic and Photonic Technologies Category AFD - Published papers from domestic scientific conferences Year 2019 Title Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer Author Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV Co-authors Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV Šagátová A. Sekáčová Mária 1955 SAVELEK - Elektrotechnický ústav SAV Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV Nečas V. Action VEGA 2/0092/18. vedúci projektu Zápražný, Zdenko : 2018-2020 Source document AIP Conference Proceedings : Applied Physics of Condensed Matter (APCOM 2019). Vol. 2131 (2019), no. 020054 Category ADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2019 DOI 10.1063/1.5119507