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Title Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric Author Heidelberg G. Co-authors Roeckerath M. Steins R. Stefaniak M. Fox A. Schubert J. Kaluza N. Marso M. Lüth Hans Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Source document ASDAM 2006 : proceedings of the 6th International Conference on Advanced Semiconductor Devices and Microsystems. P. 241-244. - Piscataway : IEEE, 2006 / Breza J. ; Donoval D. ; Vavrinský E. Category AEC - Scientific papers in foreign peer-reviewed proceedings, monographs Category of document (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Type of document príspevok Year 2006 
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