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  1. TitleCarbon nanowalls on porous forms of SiO2 and Al2O3
    Author Kadlečíková M.
    Co-authors Jesenák K.
    Vančo L.
    Škriniarová Jaroslava SAVINFO - Ústav informatiky SAV
    Hubeňák Michal
    Breza J.
    Source document AIP Conference Proceedings. Vol. 2778 (2023), art. no. 040013
    CategoryADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2023
    DOI 10.1063/5.0135836
    article

    article

  2. TitleSynthesis of sulfide perovskites by sulfurization with boron sulfides
    Author Bystrický Roman 1986 SAVANOCH - Ústav anorganickej chémie SAV
    Co-authors Tiwari S.K.
    Hutár Peter SAVELEK - Elektrotechnický ústav SAV
    Vančo L.
    Sýkora M.
    Source document Inorganic Chemistry. Vol. 61 (2022), p. 18823–18827
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2022
    DOI 10.1021/acs.inorgchem.2c03200
    File nameAccessSizeDownloadedTypeLicense
    Synthesis of Sulfide Perovskites by Sulfurization with Boron Sulfides.pdfavailable2.2 MB5Publisher's version
    article

    article

  3. TitleRaman spectroscopy of silicon with nanostructured surface
    Author Kadlečíková M.
    Co-authors Vančo L.
    Breza J.
    Mikolášek M.
    Hušeková Kristína 1957 SAVCEMEA - Centrum pre využitie pokročilých materiálov SAV
    Fröhlich Karol 1954 SAVCEMEA - Centrum pre využitie pokročilých materiálov SAV
    Procel P.
    Zeman M.
    Isabella O.
    Source document Optik : International Journal for Light and Electron Optics. Vol. 257 (2022), no. 168869
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2022
    DOI 10.1016/j.ijleo.2022.168869
    File nameAccessSizeDownloadedTypeLicense
    Raman spectroscopy of silicon with nanostructured surface.pdfNeprístupný/archív8.5 MB2Publisher's version
    article

    article

  4. TitleMg doping of InAlN layers
    Author Pohorelec Ondrej SAVELEK - Elektrotechnický ústav SAV
    Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV
    Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV
    Vančo L.
    Gregor M.
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Source document Proceedings of ADEPT 2021 : 9th International Conference on Advances in Electronic and Photonic Technologies, Podbanské, High Tatras, Slovakia. P. 147-150. - Žilina : Univ. Zilina in EDIS-Publishing Centre of UZ, 2021 / Jandura D. ; Maniaková P. ; Lettrichová I. ; Kováč Jaroslav Jr.
    CategoryAFD - Published papers from domestic scientific conferences
    Year2021
    File nameAccessSizeDownloadedTypeLicense
    Mg doping of InAlN layers.pdfavailable769.2 KB1Publisher's version
    article

    article

  5. TitleA systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: A complete depth-resolved investigation
    Author Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV
    Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Vančo L.
    Šiffalovič Peter 1975 SAVFYZIK - Fyzikálny ústav SAV
    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV
    Machajdík Daniel SAVELEK - Elektrotechnický ústav SAV
    Rosová Alica 1962 SAVELEK - Elektrotechnický ústav SAV
    Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV
    Kováč Jaroslav Jr.
    Maťko Igor 1963 SAVFYZIK - Fyzikálny ústav SAV
    Kuball M.
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Source document CrystEngComm. Vol. 22, no. 1 (2020), p. 130-141
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2020
    DOI 10.1039/c9ce01549c
    File nameAccessSizeDownloadedTypeLicense
    A systematic study of MOCVD reactor conditions.pdfNeprístupný/archív5.7 MB0Publisher's version
    article

    article

  6. TitleGeneration of hole gas in non-inverted InAl(Ga)N/GaN heterostructures
    Author Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV
    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV
    Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV
    Vančo L.
    Veselý M.
    Bouazzaoui F.
    Chauvat M.-P.
    Ruterana P.
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Action VEGA 2/0012/18. vedúci projektu Kuzmík, Ján : 2018-2021
    Source document Applied Physics Express. Vol. 12 (2019), no. 014001
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2019
    DOI 10.7567/1882-0786/aaef41
    URLURL link
    File nameAccessSizeDownloadedTypeLicense
    Generation of hole gas in non-inverted InAl.pdfNeprístupný/archív605.7 KB0Publisher's version
    article

    article

  7. TitleEvidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD
    Author Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV
    Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV
    Chauvat M.-P.
    Minj A.
    Gucmann Filip 1987
    Vančo L.
    Kováč Jaroslav Jr.
    Kret S.
    Ruterana P.
    Kuball M.
    Šiffalovič Peter 1975 SAVFYZIK - Fyzikálny ústav SAV
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Source document Journal of Applied Physics. Vol. 125, no. 10 (2019), 105304
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2019
    DOI 10.1063/1.5079756
    File nameAccessSizeDownloadedTypeLicense
    Evidence of relationship between strain and In.pdfNeprístupný/archív2.3 MB0Publisher's version
    Evidence of relationship between strain and In-incorporation growth of N-polar In-rich InAlN buffer layer by OMCVD.pdfavailable1.6 MB11Postprint
    article

    article

  8. TitleGrowth of lithium hybride thin films from solutions: Towards solution atomic layer deposition of lithiated films
    Author Kundrata Ivan SAVELEK - Elektrotechnický ústav SAV
    Co-authors Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV
    Vančo L.
    Mičušík Matej 1977- SAVPOLYM - Ústav polymérov SAV
    Bachmann J.
    Action VEGA 2/0136/18. vedúci projektu Fröhlich, Karol : 2018-2021
    Source document Beilstein Journal of Nanotechnology. Vol. 10 (2019), p. 1443-1451
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2019
    DOI 10.3762/bjnano.10.142
    article

    article

  9. TitleEffect of temperature and carrier gas on the properties of thick InxAl1-xN layer
    Author Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV
    Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV
    Vančo L.
    Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV
    Kováč Jaroslav
    Šiffalovič Peter 1975 SAVFYZIK - Fyzikálny ústav SAV
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Source document Applied Surface Science. Vol. 470 (2019), p. 1-7
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2019
    DOI 10.1016/j.apsusc.2018.10.231
    File nameAccessSizeDownloadedTypeLicense
    Effect of temperature and carrier gas on the properties of thick N layer.pdfavailable3.2 MB0Publisher's version
    article

    article

  10. TitleComparison of Al and Cu masks used for patterning boron-doped diamonds in oxygen plasma
    Author Marton Marián
    Co-authors Ritomský Mário 1993- SAVINFO - Ústav informatiky SAV
    Řeháček V.
    Michniak P.
    Behúl Miroslav
    Novák Patrik
    Vančo L.
    Vojs M.
    Source document Journal of Micromechanics and Microengineering. Vol. 29, no. 12 (2019), art. no. 124004, 9 p.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2020
    DOI 10.1088/1361-6439/ab4d6f
    File nameAccessSizeDownloadedTypeLicense
    Comparison of Al and Cu masks used for patterning boron-doped diamonds in oxygen plasma.pdfavailable3 MB0Publisher's version
    article

    article


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