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  1. TitleGrowth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer
    Author Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV
    Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Minj A.
    Chauvat M.-P.
    Ruterana P.
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Source document Applied Surface Science. Vol. 502 (2020), no. 144086
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2020
    DOI 10.1016/j.apsusc.2019.144086
    File nameAccessSizeDownloadedTypeLicense
    Radiation hardness limits in gamma spectrometry of semi-insulating GaAs.pdfNeprístupný/archív4 MB1Publisher's version
    article

    article

  2. TitleGeneration of hole gas in non-inverted InAl(Ga)N/GaN heterostructures
    Author Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV
    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV
    Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV
    Vančo L.
    Veselý M.
    Bouazzaoui F.
    Chauvat M.-P.
    Ruterana P.
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Action VEGA 2/0012/18. vedúci projektu Kuzmík, Ján : 2018-2021
    Source document Applied Physics Express. Vol. 12 (2019), no. 014001
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2019
    DOI 10.7567/1882-0786/aaef41
    URLURL link
    File nameAccessSizeDownloadedTypeLicense
    Generation of hole gas in non-inverted InAl.pdfNeprístupný/archív605.7 KB0Publisher's version
    article

    article

  3. TitleEvidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD
    Author Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV
    Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV
    Chauvat M.-P.
    Minj A.
    Gucmann Filip 1987
    Vančo L.
    Kováč Jaroslav Jr.
    Kret S.
    Ruterana P.
    Kuball M.
    Šiffalovič Peter 1975 SAVFYZIK - Fyzikálny ústav SAV
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Source document Journal of Applied Physics. Vol. 125, no. 10 (2019), 105304
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2019
    DOI 10.1063/1.5079756
    File nameAccessSizeDownloadedTypeLicense
    Evidence of relationship between strain and In.pdfNeprístupný/archív2.3 MB0Publisher's version
    Evidence of relationship between strain and In-incorporation growth of N-polar In-rich InAlN buffer layer by OMCVD.pdfavailable1.6 MB11Postprint
    article

    article



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