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Title Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer Author Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV Minj A. Chauvat M.-P. Ruterana P. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV Source document Applied Surface Science. Vol. 502 (2020), no. 144086 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2020 DOI 10.1016/j.apsusc.2019.144086 File name Access Size Downloaded Type License Radiation hardness limits in gamma spectrometry of semi-insulating GaAs.pdf Neprístupný/archív 4 MB 1 Publisher's version 
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Title Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD Author Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV Chauvat M.-P. Minj A. Gucmann Filip 1987 Vančo L. Kováč Jaroslav Jr. Kret S. Ruterana P. Kuball M. Šiffalovič Peter 1975 SAVFYZIK - Fyzikálny ústav SAV Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV Source document Journal of Applied Physics. Vol. 125, no. 10 (2019), 105304 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2019 DOI 10.1063/1.5079756 File name Access Size Downloaded Type License Evidence of relationship between strain and In.pdf Neprístupný/archív 2.3 MB 0 Publisher's version Evidence of relationship between strain and In-incorporation growth of N-polar In-rich InAlN buffer layer by OMCVD.pdf available 1.6 MB 13 Postprint article