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Records found: 21  
Your query: Author Sysno/Doc.kind = "^sav_un_epca 050345 xcla^"
  1. TitleThermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD
    Author Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Nádaždy Peter SAVELEK - Elektrotechnický ústav SAV
    Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV
    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV
    Priesol J.
    Egyenes Fridrich SAVELEK - Elektrotechnický ústav SAV
    Šatka A.
    Rosová Alica 1962 SAVELEK - Elektrotechnický ústav SAV
    Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV
    Source document Materials science in semiconductor processing. Vol. 156 (2023), no. 107289
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2023
    DOI 10.1016/j.mssp.2022.107289
    File nameAccessSizeDownloadedTypeLicense
    Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD.pdfNeprístupný/archív9.9 MB0Publisher's version
    article

    article

  2. TitleGrowth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire
    Author Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Blaho Michal 1983
    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV
    Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV
    Kučera Michal 1956 SAVELEK - Elektrotechnický ústav SAV
    Nádaždy Peter SAVELEK - Elektrotechnický ústav SAV
    Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV
    Rosová Alica 1962 SAVELEK - Elektrotechnický ústav SAV
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Source document Materials science in semiconductor processing. Vol. 156 (2023), no. 107290
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2023
    DOI 10.1016/j.mssp.2022.107290
    File nameAccessSizeDownloadedTypeLicense
    Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire.pdfNeprístupný/archív3.9 MB0Publisher's version
    article

    article

  3. TitleElectron transport properties in thin InN layers grown on InAlN
    Author Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV
    Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Source document Materials science in semiconductor processing. Vol. 155 (2023), no. 107250
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2023
    DOI 10.1016/j.mssp.2022.107250
    File nameAccessSizeDownloadedTypeLicense
    Electron transport properties in thin InN layers grown on InAlN.pdfNeprístupný/archív2 MB0Publisher's version
    article

    article

  4. TitleTemperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes
    Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV
    Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV
    Source document Materials science in semiconductor processing. Vol. 140 (2022), no. 106413
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2022
    DOI 10.1016/j.mssp.2021.106413
    File nameAccessSizeDownloadedTypeLicense
    Temperature dependence of electrical behaviour of inhomogeneous NiAu.pdfNeprístupný/archív2.4 MB2Publisher's version
    article

    article

  5. TitleCharge transport in SiCN/Si heterostructures
    Author Sukach A.V.
    Co-authors Tetyorkin V.V.
    Тkachuk А.І.
    Kozak Andrii SAVCEMEA - Centrum pre využitie pokročilých materiálov SAV
    Porada O.K.
    Ivashchenko V.I.
    Source document Materials science in semiconductor processing. Vol. 143 (2022), art. no. 106515
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2022
    DOI 10.1016/j.mssp.2022.106515
    URLURL link
    File nameAccessSizeDownloadedTypeLicense
    Charge transport in SiCNSi heterostructures.pdfNeprístupný/archív3.1 MB1Publisher's version
    article

    article

  6. TitleSemi-insulating GaN for vertical structures: role of substrate selection and growth pressure
    Author Šichman Peter SAVELEK - Elektrotechnický ústav SAV
    Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV
    Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV
    Priesol J.
    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV
    Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV
    Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV
    Vincze A.
    Chvála A.
    Marek J.
    Šatka A.
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Action APVV 18-0054. vedúci projektu Kuzmík, Ján : 2019-2022
    VEGA 2/0012/18. vedúci projektu Kuzmík, Ján : 2018-2021
    Source document Materials science in semiconductor processing. Vol. 118 (2020), no. 105203
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2020
    DOI 10.1016/j.mssp.2020.105203
    File nameAccessSizeDownloadedTypeLicense
    Semi-insulating GaN for vertical structures role of substrate selection and growth.pdfavailable1.4 MB8Author's preprint
    Semi-insulating GaN for vertical.pdfNeprístupný/archív1.2 MB1Publisher's version
    article

    article

  7. TitleMorphological, structural and optical properties of Mg-doped ZnO nanocrystals synthesized using polyol process
    Author Dobrozhan Oleksandr
    Co-authors Diachenko Oleksii
    Kolesnik Maksym
    Stepanenko Aleksandr Vasiľjevič
    Vorobiov Serhii
    Baláž Peter 1947 SAVGEOTE - Ústav geotechniky SAV
    Plotnikov Sergei
    Opanasyuk Anatoliy
    Action APVV 18-0357. Chalkogenidy ako perspektívne ekologicky a ekonomicky prijateľné nanomateriály pre energetiku a medicínu : 1.7.2019 - 30.6.2023
    Source document Materials science in semiconductor processing. Vol. 102 (2019), p. 104595
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2019
    DOI 10.1016/j.mssp.2019.104595
    article

    article

  8. TitleImpact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures
    Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Drobný J. SAVELEK - Elektrotechnický ústav SAV
    Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV
    Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV
    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV
    Hashizume T.
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Action VEGA 2/0109/17. vedúci projektu Gregušová, Dagmar : 2017-2020
    Source document Materials science in semiconductor processing. Vol. 91 (2019), p. 356-361
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2019
    DOI 10.1016/j.mssp.2018.12.012
    article

    article

  9. TitleState of the art on gate insulation and surface passivation for GaN-based power HEMTs
    Author Hashizume T.
    Co-authors Nishiguchi K.
    Kaneki S.
    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV
    Yatabe Z.
    Source document Materials science in semiconductor processing. Vol. 78 (2018), p. 85-95
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2018
    DOI 10.1016/j.mssp.2017.09.028
    File nameAccessSizeDownloadedTypeLicense
    State of the art on gate insulation and surface passivation for GaN-based power HEMTs.pdfavailable1.6 MB1Publisher's version
    article

    article

  10. TitleLow- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps
    Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV
    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Source document Materials science in semiconductor processing. Vol. 31, (2015), p. 525-529
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2015
    DOI 10.1016/j.mssp.2014.11.052
    article

    article


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