Počet záznamov: 1  

Conductivity and Hall effect characterization of highly resistive molecular-beam epitaxial GaN layers

  1. NázovConductivity and Hall effect characterization of highly resistive molecular-beam epitaxial GaN layers
    Autor Kordoš Peter
    Spoluautori Morvic Marian SAVELEK - Elektrotechnický ústav SAV

    Betko Július SAVELEK - Elektrotechnický ústav SAV

    Hove J. M. van

    Wowchak A.M.

    Chow P.P.

    Zdroj.dok. Journal of Applied Physics. Vol. 88, no. 10 (2000), p. 5821-5826
    Jazyk dok.eng - angličtina
    KrajinaUS - Spojené štáty
    Druh dok.rozpis článkov z periodík (rbx)
    OhlasyMATSUI, H. - TABATA, H. In JOURNAL OF APPLIED PHYSICS. JUN 15 2006, vol. 99, no. 12.
    SOH, C.B. - CHUA, S.J. - LIU, W. - LAI, M.Y. - TRIPATHY, S. In SOLID STATE COMMUNICATIONS. NOV 2005, vol. 136, no. 7, p. 421-426.
    MATSUI, H. - TABATA, H. In APPLIED PHYSICS LETTERS. OCT 3 2005, vol. 87, no. 14.
    WITTE, H. - KRTSCHIL, A. - SCHRENK, E. - FLUEGGE, K. - DADGAR, A. - KROST, A. In JOURNAL OF APPLIED PHYSICS. FEB 15 2005, vol. 97, no. 4.
    SOH, C.B. - CHUA, S.J. - LIM, H.F. - CHI, D.Z. - LIU, W. - TRIPATHY, S. JOURNAL OF PHYSICS-CONDENSED MATTER. SEP 1 2004, vol. 16, no. 34, p. 6305-6315.
    GURUSINGHE, M.N. - ANDERSSON, T.G. In PHYSICAL REVIEW B. JUN 15 2003, vol. 67, no. 23.
    CHEN, P. - CHUA, S.J. - ZHENG, Y.D. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. DEC 2001, vol. 4, no. 6, p. 591-594.
    UREN, M.J. - HERBERT, D. - MARTIN, T. - HUGHES, B.T. - BIRBECK, J. - BALMER, R. - PIDDUCK, A.J. - JONES, S.K. In PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. NOV 2001, vol. 188, no. 1, p. 195-198.
    SHALISH, I. - DE Oliveira, C.E.M. - SHAPIRA, Y. - SALZMAN, J. In PHYSICAL REVIEW B. NOV 15 2001, vol. 6420, no. 20.
    CHO, Y.S. - HARDTDEGEN, H. - KALUZA, N. - STEINS, R. - HEIDELBERGER, G. - LUTH, H. In JOURNAL OF CRYSTAL GROWTH. ISSN 0022-0248, SEP 1 2007, vol. 307, no. 1, p. 6-13.
    DOBRZANSKI, L. - STRUPINSKI, W. In IEEE JOURNAL OF QUANTUM ELECTRONICS. ISSN 0018-9197, JAN-FEB 2007, vol. 43, no. 1, p. 188-195.
    WANG, X. - LU, Y.M. - SHEN, D.Z. - ZHANG, Z.Z. - LI, B.H. - YAO, B. - ZHANG, J.Y. - ZHAO, D.X. - FAN, X.W. - TANG, Z.K. Electrical properties of N-doped ZnO grown on sapphire by P-MBE. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, FEB 2007, vol. 22, no. 2, p. 65-69.
    MATSUI, H. - TABATA, H. In Zinc Oxide Materials and Devices II. 2007, vol. 6474, p. O4740-O4740.
    RANGEL-KUOPPA, V.T. - AGUILAR, C.G. - SANCHEZ-RESENDIZ, V. In THIN SOLID FILMS. JAN 31 2011, vol. 519, no. 7, p. 2255-2261.
    KIM, S. - KIM, H.J. - CHOI, S. - LOCHNER, Z. - RYOU, J.H. - DUPUIS, R.D. - KIM, H. In ELECTRONICS LETTERS. SEP 27 2012, vol. 48, no. 20, p. 1285-+.
    CHOI, Y. - KIM, H. In JOURNAL OF ALLOYS AND COMPOUNDS. AUG 25 2012, vol. 533, p. 15-18.
    PARK, Y. - AHN, K.S. - KIM, H. In IEEE TRANSACTIONS ON ELECTRON DEVICES. MAR 2012, vol. 59, no. 3, p. 680-684.
    ZHAO, Y. - ZHONG, W.J. - LIU, J. - HUANG, Z.H. - WEI, A.X. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. MAR 2014, vol. 29, no. 3.
    OH, M. - LEE, J.J. - LEE, J.K. - KIM, H. In JOURNAL OF ALLOYS AND COMPOUNDS. FEB 5 2014, vol. 585, p. 414-417.
    OH, M. - KIM, H. In JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. OCT 2015, vol. 15, no. 10, SI, p. 7531-7536.
    NINGTHOUJAM, R.S. - GAJBHIYE, N.S. In PROGRESS IN MATERIALS SCIENCE. MAY 2015, vol. 70, p. 50-154.
    CHAUHAN, Prerna - HASENOHRL, Stanislav - DOBROCKA, Edmund - VANCO, L'ubomir - STOKLAS, Roman - KOVAC, Jaroslav - SIFFALOVIC, Peter - KUZMIL, Jan. Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer. In APPLIED SURFACE SCIENCE. ISSN 0169-4332, 2019, vol. 470, no., pp. 1-7.
    NINGTHOUJAM, R. S. SYNTHESIS AND CHARACTERIZATION OF BORIDES, CARBIDES, AND NITRIDES AND THEIR APPLICATIONS. In MATERIALS UNDER EXTREME CONDITIONS: RECENT TRENDS AND FUTURE PROSPECTS, 2017, vol., no., pp. 337-375.
    CHEN, C.K. - FAN, D. - XU, H. - JIANG, M.Y. - LI, X. - LU, S.H. - KE, C.C. - HU, X.J. Monoatomic tantalum induces ordinary-pressure phase transition from graphite to n-type diamond. In CARBON. ISSN 0008-6223, AUG 30 2022, vol. 196, p. 466-473. Dostupné na: https://doi.org/10.1016/j.carbon.2022.05.013.
    JIA, H. - CHEN, Y. - LIN, C. - RUAN, Y.R. - CHEN, S.Y. - ZHANG, J.M. - HUANG, Z.G. The novel positive colossal electroresistance in PbPdO2 thin film with (002) preferred orientation. In CERAMICS INTERNATIONAL. ISSN 0272-8842, OCT 1 2021, vol. 47, no. 19, p. 26768-26778. Dostupné na: https://doi.org/10.1016/j.ceramint.2021.06.085.
    KategóriaADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných
    Kategória (od 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Typ výstupučlánok
    Rok vykazovania2000
    článok

    článok

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    200019992.275
Počet záznamov: 1  

  Tieto stránky využívajú súbory cookies, ktoré uľahčujú ich prezeranie. Ďalšie informácie o tom ako používame cookies.