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Reactive ion etching with end point detection of microstructured Mo/Si multilayers by optical emission spectroscopy
Názov Reactive ion etching with end point detection of microstructured Mo/Si multilayers by optical emission spectroscopy Autor Dreeskornfeld L. Spoluautori Segler R. Haindl G. Wehmeyer O. Rahn S. Majková Eva 1950 SAVFYZIK - Fyzikálny ústav SAV ORCID Kleineberg U. Heinzmann U. Hudek Peter 1953- SAVINFO - Ústav informatiky SAV SCOPUS RID ORCID Kostič Ivan 1955- SAVINFO - Ústav informatiky SAV SCOPUS RID ORCID Zdroj.dok. Microelectronic Engineering. Vol. 54, no. 3-4 (2000), p. 303-314 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy HAN, Kyounghoon - PARK, Kun Joo - CHAE, Heeyeop - YOON, En Sup. Modified PCA algorithm for the end point monitoring of the small open area plasma etching process using the whole optical emission spectra. In 2007 INTERNATIONAL CONFERENCE ON CONTROL, AUTOMATION AND SYSTEMS, VOLS 1-6, 2007, vol., no., pp. 2533. HAN, Kyounghoon - YOON, En Sup - LEE, Jaewon - CHAE, Heeyeop - HAN, Kwang Hoon - PARK, Kun Joo. Real-time end-point detection using modified principal component analysis for small open area SiO(2) plasma etching. In INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH. ISSN 0888-5885, 2008, vol. 47, no. 11, pp. 3907-3911. HAN, Kyounghoon - PARK, Kun Joo - CHAE, Heeyeop - YOON, En Sup. Multi-way principal component analysis for the endpoint detection of the metal etch process using the whole optical emission spectra. In KOREAN JOURNAL OF CHEMICAL ENGINEERING. ISSN 0256-1115, 2008, vol. 25, no. 1, pp. 13-18. PONG, Philip W. T. - SCHMOUELI, Moshe - EGELHOFF, William F. Fabrication of spintronic devices etching endpoint detection by resistance measurement for magnetic tunnel junctions art. no. 66450S. In Nanoengineering: Fabrication, Properties, Optics, and Devices IV. ISSN 0277-786X, 2007, vol. 6645, no., pp. S6450-S6450. JEON, Sung-Ik - KIM, Seung-Gyun - HONG, Sang-Jeen - HAN, Seung-Soo. Endpoint Detection of SiO(2) Plasma Etching Using Expanded Hidden Markov Model. In ADVANCES IN NEURAL NETWORKS ISNN 2010, PT 2, PROCEEDINGS. ISSN 0302-9743, 2010, vol. 6064, no., pp. 464-471, part II. LI, Juntao - LIU, Bo - SONG, Zhitang - FENG, Gaoming - WU, Guanping - HE, Aodong - YANG, Zuoya - ZHU, Nanfei - XU, Jia - REN, Jiadong - FENG, Songlin - GAN, F - SONG, Z. Optical Emission Spectroscopy Analysis for Ge2Sb2Te5 Etching Endpoint Detection in HBr/He Plasma. In 2012 INTERNATIONAL WORKSHOP ON INFORMATION STORAGE AND NINTH INTERNATIONAL SYMPOSIUM ON OPTICAL STORAGE. ISSN 0277-786X, 2013, vol. 8782, UNSP 87820L. LEOPOLD, S. - MUELLER, L. - KREMIN, C. - HOFFMANN, M. Online monitoring of the passivation breakthrough during deep reactive ion etching of silicon using optical plasma emission spectroscopy. In JOURNAL OF MICROMECHANICS AND MICROENGINEERING. ISSN 0960-1317, 2013, vol. 23, no. 7, 074001. GU, Ja Myung - THADESAR, Paragkumar A. - DEMBLA, Ashish - BAKIR, Muhannad S. - MAY, Gary S. - HONG, Sang Jeen. Endpoint Detection in Low Open Area TSV Fabrication Using Optical Emission Spectroscopy. In IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY. ISSN 2156-3950, 2014, vol. 4, no. 7, pp. 1251-1260. MANKA, Tadeas - SERY, Mojmir - KRATKY, Stanislav - ZEMANEK, Pavel. LASER SYSTEM FOR MEASURING MEMS RELIEF CREATED BY THE METHOD OF DEEP REACTIVE ION ETCHING. In 21ST CZECH-POLISH-SLOVAK OPTICAL CONFERENCE ON WAVE AND QUANTUM ASPECTS OF CONTEMPORARY OPTICS. ISSN 0277-786X, 2018, vol. 10976, UNSP 109760M. ZHANG, Junjie - LUO, Jiahui - ZOU, Xudong - CHEN, Jiamin. An Endpoint Detection System for Ion Beam Etching Using Optical Emission Spectroscopy. In MICROMACHINES, 2022, vol. 13, no. 2. Dostupné na: https://doi.org/10.3390/mi13020259. LEE, Seonghyeon - CHOI, Hojun - KIM, Jaehyeon - CHAE, Heeyeop. Spectral clustering algorithm for real-time endpoint detection of silicon nitride plasma etching. In Plasma Processes and Polymers, 2023-06-01, 20, 6, pp. ISSN 16128850. Dostupné na: https://doi.org/10.1002/ppap.202200238. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2000 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1016/S0167-9317(99)00449-9 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2000 1999 0.810
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