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The relations for electron effective masses of strained InxGa1-xAs layers
Názov The relations for electron effective masses of strained InxGa1-xAs layers Autor Hrivnák Ľubomír SAVELEK - Elektrotechnický ústav SAV Zdroj.dok. Physica Status Solidi A. Vol. 123, (1991), p. K133 Jazyk dok. eng - angličtina Krajina GR - Grécko Druh dok. rozpis článkov z periodík (rbx) Heslá InxGa1-xAs Ohlasy NITTA, J. - LIN, Y.P. - KOGA, T. - AKAZAKI, T. Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. ISSN 1386-9477, JAN 2004, vol. 20, no. 3-4, p. 429-432. NITTA, J. - LIN, Y.P. - AKAZAKI, T. - KOGA, T. Gate-controlled electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure. APPLIED PHYSICS LETTERS. ISSN 0003-6951, DEC 1 2003, vol. 83, no. 22, p. 4565-4567. AKAZAKI, T. - NITTA, J. - TAKAYANAGI, H. - ENOKI, T. - ARAI, K. Highly confined two-dimensional electron gas in an In0.52Al0.48As/In0.53Ga0.47As modulation-doped structure with a strained InAs quantum well. JOURNAL OF ELECTRONIC MATERIALS. ISSN 0361-5235, APR 1996, vol. 25, no. 4, p. 745-748. SAITOH, T. - TAKEUCHI, H. - KONDA, J. - YOH, K. Optical characterization of InAs quantum dots fabricated by molecular beam epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. ISSN 0021-4922, FEB 1996, vol. 35, no. 2B, p. 1217-1220. Kategória ADC Rok vykazovania 1991 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 1991
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