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Ru and RuO2 gate electrodes for advanced CMOS technology
Názov Ru and RuO2 gate electrodes for advanced CMOS technology Autor Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV Machajdík Daniel SAVELEK - Elektrotechnický ústav SAV Hooker J.C. Perez N. Fanciulli M. Ferrari S. Wiemer C. Dimoulas A. Vellianitis G. Roozeboom F. Zdroj.dok. Materials Science and Engineering, B - Solid-State Materials for Advanced Technology. Vol. 109, (2004), p. 117–121 Jazyk dok. eng - angličtina Krajina NL - Holandsko Druh dok. rozpis článkov z periodík (rbx) Ohlasy Hur'yeva, Tetyana Lisker, Marco Burte, Edmund P.CHEMICAL VAPOR DEPOSITION. JUL 2006, vol. 12, no. 7, p. 429-434. LU, Y.K. - ZHU, W. - CHEN, X.F. - GOPALKRISHNAN, R. MICROELECTRONIC ENGINEERING. FEB 2006, vol. 83, no. 2, p. 371-375. Deweerd, W., Schram, T., Van Hoornick, N., Witters, T., Lisoni, J., Rohr, E., De Gendt, S., Heyns, M., Schaekers, M., Richard, O., Wickramanayaka, S., Yamada, N., Brunco, D. 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ZHANG, M. - CHEN, W. - DING, S.J. - LIU, Z.Y. - HUANG, Y. - LIAO, Z.W. - ZHANG, D.W. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. FEB 7 2008, vol. 41, no. 3. CHATTERJEE, S. - KUO, Y. - LU, J. In MICROELECTRONIC ENGINEERING. JAN 2008, vol. 85, no. 1, Sp. Iss. SI, p. 202-209. CHAMBERS, S.A. In ADVANCED MATERIALS. JAN 12 2010, vol. 22, no. 2, p. 219-248. LEE, J.H. - TSAI, Z.Y. - LIN, Y.C. - ZHU, Y.Y. - CHEN, B.H. In JAPANESE JOURNAL OF APPLIED PHYSICS. 2010, vol. 49, no. 9, Part 1. LEE, D.J. - YIM, S.S. - KIM, K.S. - KIM, S.H. - KIM, K.B. In JOURNAL OF APPLIED PHYSICS. JAN 1 2010, vol. 107, no. 1. NOWAKOWSKI, P. - KOPIA, A. - VILLAIN, S. - FREMY, M.A. - KUSINSKI, J. - GAVARRI, J.R. In JOURNAL OF MICROSCOPY-OXFORD. MAR 2010, vol. 237, no. 3, p. 246-252. DAS, A. - MAIKAP, S. - LIN, C.H. - TZENG, P.J. - TIEN, T.C. - WANG, T.Y. - CHANG, L.B. - YANG, J.R. - TSAI, M.J. In MICROELECTRONIC ENGINEERING. OCT 2010, vol. 87, no. 10, p. 1821-1827. NOWAKOWSKI, P. - VILLAIN, S. - AGUIR, K. - GUERIN, J. - KOPIA, A. - KUSINSKI, J. - GUINNETON, F. - GAVARRI, J.R. In THIN SOLID FILMS. MAR 1 2010, vol. 518, no. 10, p. 2801-2807. KUKLI, K. - KEMELL, M. - PUUKILAINEN, E. - AARIK, J. - AIDLA, A. - SAJAVAARA, T. - LAITINEN, M. - TALLARIDA, M. - SUNDQVIST, J. - RITALA, M. - LESKELA, M. In JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2011, vol. 158, no. 3, p. D158-D165. LEE, J.H. - LIN, Y.C. - CHEN, B.H. In IEEE TRANSACTIONS ON ELECTRON DEVICES. MAR 2011, vol. 58, no. 3, p. 672-676. SALAUN, A. - TROMMER, J. - NEWCOMB, S.B. - POVEY, I.M. - SALAUN, M. - KEENEY, L. - O'MAHONY, A. - PEMBLE, M.E. In CHEMICAL VAPOR DEPOSITION. JUN 2011, vol. 17, no. 4-6, p. 114-122. LEE, J.H. - LIN, Y.C. - CHEN, M.Y. In IEEE TRANSACTIONS ON ELECTRON DEVICES. NOV 2011, vol. 58, no. 11, p. 3920-3924. KIM, H.K. - YU, I.H. - LEE, J.H. - PARK, T.J. - HWANG, C.S. In APPLIED PHYSICS LETTERS. OCT 22 2012, vol. 101, no. 17. 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ISSN 1938-5862, 2018, vol. 85, no. 13, p. 743-749. ZHANG, Fan - YU, Xuegong - HU, Jiajun - LEI, Lecheng - HE, Yi - ZHANG, Xingwang. Coupling Ru-MoS2 heterostructure with silicon for efficient photoelectrocatalytic water splitting. In CHEMICAL ENGINEERING JOURNAL, 2021, vol. 423, no., pp. ISSN 1385-8947. Dostupné na: https://doi.org/10.1016/j.cej.2021.130231. HAYES, Michael - JENKINS, Melanie A. - WOODRUFF, Jacob - MOSER, Daniel F. - DEZELAH, Charles L. - CONLEY, John F. Improved properties of atomic layer deposited ruthenium via postdeposition annealing. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, vol. 39, no. 5, pp. ISSN 0734-2101. Dostupné na: https://doi.org/10.1116/6.0001078. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2004 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2004 2003 1.070
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