Počet záznamov: 1
ZrO2/(Al)GaN metal-oxide-semiconductor structures characterization and application
Názov ZrO2/(Al)GaN metal-oxide-semiconductor structures characterization and application Autor Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Konstantinidis G. Harasek S. Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Bertagnolli E. Georgakilas A. Pogany D. SAVELEK - Elektrotechnický ústav SAV Zdroj.dok. Semiconductor Science and Technology. Vol. 19, (2004), p. 1364-1368 Jazyk dok. eng - angličtina Krajina GB - Veľká Británia Druh dok. rozpis článkov z periodík (rbx) Ohlasy SHI, L. - YUAN, Y. - LIANG, X.F. - XIA, Y.D. - YIN, J. - LIU, Z.G. APPLIED SURFACE SCIENCE. ISSN 0169-4332, JAN 30 2007, vol. 253, no. 7, p. 3731-3735. LIU, C. - CHOR, E.F. - TAN, L.S. - DONG, Y.F. APPLIED PHYSICS LETTERS. ISSN 0003-6951, MAY 29 2006, vol. 88, no. 22. LIU, C. - CHOR, E.F. - TAN, L.S. APPLIED PHYSICS LETTERS. ISSN 0003-6951, APR 24 2006, vol. 88, no. 17. YANG, C. - FAN, H.Q. - QJU, S.J. - XI, Y.X. - FU, Y.F. In JOURNAL OF NON-CRYSTALLINE SOLIDS. JAN 1 2009, vol. 355, no. 1, p. 33-37. FENG, Q. - TIAN, Y. - BI, Z.W. - YUE, Y.Z. - NI, J.Y. - ZHANG, J.C. - HAO, Y. - YANG, L.A. In CHINESE PHYSICS B. ISSN 1674-1056, JUL 2009, vol. 18, no. 7, p. 3014-3017. TIAN, F. - CHOR, E.F. In JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2010, vol. 157, no. 5, p. H557-H561. HU, C.C. - LIN, M.S. - WU, T.Y. - ADRIYANTO, F. - SZE, P.W. - WU, C.L. - WANG, Y.H. In PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 9. 2011, vol. 41, no. 3, p. 439-444. MIZUE, C. - HORI, Y. - MICZEK, M. - HASHIZUME, T. In JAPANESE JOURNAL OF APPLIED PHYSICS. FEB 2011, vol. 50, no. 2. TIAN, B.L. - CHEN, C. - ZHANG, J.H. - LI, Y.R. - CHEN, Y.F. - LIU, X.Z. - ZHOU, J.J. - LI, L. - CHEN, C. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. AUG 2011, vol. 26, no. 8. FENG, Q. - LI, Q. - XING, T. - WANG, Q. - ZHANG, J.C. - HAO, Y. In CHINESE PHYSICS B. JUN 2012, vol. 21, no. 6. LAKSHMI, B.P. - REDDY, M.S.P. - KUMAR, A.A. - REDDY, V.R. In CURRENT APPLIED PHYSICS. MAY 2012, vol. 12, no. 3, p. 765-772. HU, C.C. - LIN, M.S. - WU, T.Y. - ADRIYANTO, F. - SZE, P.W. - WU, C.L. - WANG, Y.H. In IEEE TRANSACTIONS ON ELECTRON DEVICES. JAN 2012, vol. 59, no. 1, p. 121-127. KAMBAYASHI, H. - NOMURA, T. - UEDA, H. - HARADA, K. - MOROZUMI, Y. - HASEBE, K. - TERAMOTO, A. - SUGAWA, S. - OHMI, T. In JAPANESE JOURNAL OF APPLIED PHYSICS. APR 2013, vol. 52, no. 4, 2, SI. Lee, Y.-C., Kao, T.-T., Shen, S.-C. 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 pp. 333-336 AL-HADA, N.M. - SAION, E.B. - SHAARI, A.H. - KAMARUDIN, M.A. - FLAIFEL, M.H. - AHMAD, S.H. - GENE, S.A. In PLOS ONE. AUG 5 2014, vol. 9, no. 8. SAGHROUNI, H. - JOMNI, S. - BELGACEM, W. - HAMDAOUI, N. - BEJI, L. In PHYSICA B-CONDENSED MATTER. JUL 1 2014, vol. 444, p. 58-64. LIU, X. - KIM, J. - SUNTRUP, D.J. - WIENECKE, S. - TAHHAN, M. - YELURI, R. - CHAN, S.H. - LU, J. - LI, H. - KELLER, S. - MISHRA, U.K. In APPLIED PHYSICS LETTERS. JUN 30 2014, vol. 104, no. 26. CHIU, H.C. - WU, C.H. - CHI, J.F. - CHIEN, F.T. In MICROELECTRONICS RELIABILITY. JUN-JUL 2014, vol. 54, no. 6-7, p. 1282-1287. KODAMA, S. - TOKUDA, H. - KUZUHARA, M. In 2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK). 2014. HAHN, H. - PECS, B. - KOVACS, A. - HEUKEN, M. - KALISCH, H. - VESCAN, A. In JOURNAL OF APPLIED PHYSICS. JUN 7 2015, vol. 117, no. 21. HU, C.C. - WU, C.E. - LIN, H.C. - LEE, K.W. - WANG, Y.H. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. JAN 2015, vol. 29, p. 272-276. REDDY, V.R. - PRASAD, C.V. Surface chemical states, electrical and carrier transport properties of Au/ZrO2/n-GaN MIS junction with a high-k ZrO2 as an insulating layer. In MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. MAY 2018, vol. 231, p. 74-80. XING, W.C. - LIU, Z.H. - RANJAN, K. - NG, G.I. - PALACIOS, T. Planar Nanostrip-Channel Al2O3/ InAlN/GaN MISHEMTs on Si With Improved Linearity. In IEEE ELECTRON DEVICE LETTERS. JUL 2018, vol. 39, no. 7, p. 947-950. REDDY, N. Nanda Kumar - AKKERA, Harish Sharma - SEKHAR, M. Chandra - UTHANNA, S. Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure. In SILICON. ISSN 1876-990X, 2019, vol. 11, no. 1, pp. 159-164. CUI, X. - CHENG, W.J. - HUA, Q.L. - LIANG, R.R. - HU, W.G. - WANG, Z.L. Enhanced performances of AlGaN/GaN HEMTs with dielectric engineering of HfZrOx. In NANO ENERGY. ISSN 2211-2855, FEB 2020, vol. 68. BAKKALOGLU, O.F. - EJDERHA, K. - EFEOGLU, H. - KARATAS, S. - TURUT, A. Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures. In JOURNAL OF MOLECULAR STRUCTURE. ISSN 0022-2860, JAN 15 2021, vol. 1224. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2004 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2004
Počet záznamov: 1